SSS4N80A.PDF

FEATURES

BV DSS = 800 V

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n Extended Safe Operating Area

n Lower Leakage Current : 25 mA (Max.) @ V DS = 800V

n Low R DS(ON) : 3.400 W (Typ.)

R DS(on) = 4.0 W

I D = 2.5 A

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

Units

V DSS

Drain-to-Source Voltage

Continuous Drain Current (T C =25

800

2.5

1.6

250

2.5

2.0

0.32

)

Continuous Drain Current (T C =100

I D

)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T C =25

I DM

V GS

E AS

I AR

E AR

dv/dt

O 1

V/ns

O 2

O 1

O 3

)

P D

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8Ã from case for 5-seconds

T J , T STG

- 55 to +150

T L

300

Thermal Resistance

Symbol

Characteristic

Typ.

Max. Units

R q JC

R q JA

Junction-to-Case

Junction-to-Ambient

3.13

62.5

Electrical Characteristics (T C =25

unless otherwise specified)

Symbol

Characteristic

Min.

Typ.

Max. Units

Test Condition

BV DSS

DBV/DT J

V GS(th)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

800

2.0

0.98

3.5

100

-100

250

V GS =0V,I D =250mA

I D =250mA See Fig 7

V DS =5V,I D =250mA

V GS =30V

V GS =-30V

V DS =800V

V DS =640V,T C =125

I GSS

I DSS

Drain-to-Source Leakage Current

R DS(on)

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain(ÃMillerÄ) Charge

4.0

V GS =10V,I D =0.85A *

g fs

C iss

C oss

C rss

t d(on)

t r

t d(off)

t f

Q g

Q gs

Q gd

2.31

700

910

110

V DS =50V,I D =0.85A

V GS =0V,V DS =25V,f =1MHz

See Fig 5

6.2

13.9

V DD =400V,I D =2A,

R G =16 W

See Fig 13

4 5

V DS =640V,V GS =10V,

I D =2A

See Fig 6 & Fig 12

4 5

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

Min.

Typ.

Max. Units

Test Condition

I S

I SM

V SD

t rr

Q rr

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

380

2.89

2.5

1.4

Integral reverse pn-diode

in the MOSFET

T J =25

,I S =2.5A,V GS =0V

,I F =4A

di F /dt=100A/ms

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

L=75mH, I AS =2.5A, V DD =50V, R G =27 W , Starting T J =25

I SD 4A, di/dt 110A/ms, V DD BV DSS , Starting T J =25

Pulse Test : Pulse Width = 250 m s, Duty Cycle 2%

Essentially Independent of Operating Temperature

T J =25

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

V GS

Top : 1 5 V

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bott om : 4.5 V

Fig 3. On-Resistance vs. Drain Current

Fig 4. Source-Drain Diode Forward Voltage

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 6. Gate Charge vs. Gate-Source Voltage

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$ %

Fig 7. Breakdown Voltage vs. Temperature

Fig 8. On-Resistance vs. Temperature

Fig 9. Max. Safe Operating Area

Fig 10. Max. Drain Current vs. Case Temperature

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Fig 11. Thermal Response

, q -. /01%2

!*3%4$5 /

6, q -.

Fig 12. Gate Charge Test Circuit & Waveform

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Fig 13. Resistive Switching Test Circuit & Waveforms

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

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