BZX99_SERIES_2.pdf

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BZX99_SERIES_2
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX99 series
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 31
1999 Oct 20
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Philips Semiconductors
Product specification
Voltage regulator diodes
BZX99 series
FEATURES
PINNING
·
Total power dissipation: max. 300 mW
PIN
DESCRIPTION
·
Tolerance:
±
5%
1
anode
·
Working voltage range: nom. 2.4 to 15 V (E24 range)
2
not connected
·
Improved I z /V z characteristics at low currents
(I z =50
3
cathode
A). This results in a noise free and sharp
breakdown knee.
APPLICATIONS
·
General regulation functions, where low noise at low
currents is required
handbook, halfpage
2
1
·
Low-power consumption applications (e.g. hand-held
applications).
2
n.c.
1
DESCRIPTION
3
3
Low-power low noise voltage regulator diodes in small
SOT23 plastic SMD packages.
Top view
MAM243
The diodes are available in the normalized E24 ± 5%
tolerance range. The series consists of 20 types with
nominal working voltages from 2.4 to 15 V.
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZX99-C2V4
XL
BZX99-C3V9
XS
BZX99-C6V2
XD
BZX99-C10
XX
BZX99-C2V7
XM
BZX99-C4V3
XT
BZX99-C6V8
XE
BZX99-C11
XY
BZX99-C3V0
XN
BZX99-C4V7
XA
BZX99-C7V5
XU
BZX99-C12
XZ
BZX99-C3V3
XP
BZX99-C5V1
XB
BZX99-C8V2
XV
BZX99-C13
X2
BZX99-C3V6
XR
BZX99-C5V6
XC
BZX99-C9V1
XW
BZX99-C15
X3
1999 Oct 20
2
m
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Philips Semiconductors
Product specification
Voltage regulator diodes
BZX99 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I F
continuous forward current
-
300
mA
I ZSM
non-repetitive peak reverse current t p = 100 m s; square wave;
T amb =25
see Table 1
°
C prior to surge
P tot
total power dissipation
T amb =25
C; note 1
-
300
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
° C
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Total BZX99-C series
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V F
forward voltage
I F = 10 mA; see Fig.4
0.9
V
I F = 100 mA; see Fig.4
1
V
I R
reverse current
BZX99-C2V4
V R =1V
0.2
m
A
BZX99-C2V7
V R = 1 V
0.05
m A
BZX99-C3V0
V R = 1 V
0.02
m
A
BZX99-C3V3
V R =2V
2
m
A
BZX99-C3V6
V R =2V
1
m
A
BZX99-C3V9
V R =2V
0.5
m A
BZX99-C4V3
V R =2V
0.1
m
A
BZX99-C4V7
V R =3V
2
m
A
BZX99-C5V1
V R =3V
1
m
A
BZX99-C5V6
V R =4V
1
m A
BZX99-C6V2
V R =5V
0.1
m
A
BZX99-C6V8
V R = 5 V
0.01
m
A
BZX99-C7V5
V R =5V
0.1
m
A
BZX99-C8V2
V R =6V
0.2
m A
BZX99-C9V1
V R =7V
0.1
m
A
BZX99-C10
V R =7V
0.1
m
A
BZX99-C11
V R = 8 V
0.05
m
A
BZX99-C12
V R = 9 V
0.05
m A
BZX99-C13
V R = 10 V
0.05
m
A
BZX99-C15
V R = 10.5 V
0.01
m
A
1999 Oct 20
3
°
°
22891211.029.png 22891211.030.png
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX99 series
Table 1 Per type BZX99-C2V4 to C15
T j =25
C unless otherwise specified.
BZX99-C
XXX
WORKING VOLTAGE
V Z (V)
at I Z =50
m
A
VOLTAGE
CHANGE
D
V Z (V) (1)
A
(see Figs 2 and 3)
TEMP. COEFF.
S Z (mV/K)
I Ztest =50
m
DIODE CAP.
C d (pF)
at f = 1 MHz;
V R =0V
NON-REPETITIVE PEAK
REVERSE CURRENT
I ZSM (A)
at t p = 100
m
s;
Tol.
±
5%
T amb =25
°
C
MIN.
MAX.
MAX.
TYP.
MAX.
MAX.
2V4
2.28
2.52
0.80
-
1.15
370
6.0
2V7
2.57
2.84
0.85
- 1.35
350
6.0
3V0
2.85
3.15
0.90
-
1.50
325
6.0
3V3
3.14
3.47
0.93
-
1.65
310
6.0
3V6
3.42
3.78
0.95
-
1.80
300
6.0
3V9
3.71
4.10
0.97
- 1.95
290
6.0
4V3
4.09
4.52
0.99
-
2.05
280
6.0
4V7
4.47
4.94
0.97
-
1.90
275
6.0
5V1
4.85
5.36
0.60
-
0.15
300
5.0
5V6
5.32
5.88
0.20
1.75
275
4.0
6V2
5.89
6.51
0.10
2.35
250
3.0
6V8
6.46
7.14
0.10
3.00
215
3.0
7V5
7.13
7.88
0.15
3.60
170
3.0
8V2
7.79
8.61
0.15
4.25
150
3.0
9V1
8.65
9.56
0.10
5.00
120
3.0
10
9.50
10.50
0.10
5.80
110
3.0
11
10.45
11.55
0.11
6.70
110
2.5
12
11.40
12.60
0.12
7.65
105
2.5
13
12.35
13.65
0.13
8.60
105
2.5
15
14.25
15.75
0.15
10.50
100
2.0
Note
1.
D V Z =V Z at 100 m A minus V Z at 10 m A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
415
K/W
R th j-s
thermal resistance from junction to solderpoint note 2
195
K/W
Notes
1. Device mounted on an FR4 printed-circuit board.
2. Solderpoint of cathode tab.
1999 Oct 20
4
°
22891211.031.png
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX99 series
GRAPHICAL DATA
MGL741
0
handbook, full pagewidth
S z
(mV/K)
-
0.5
C2V4
-
1
C3V0
C3V3
- 1.5
C3V6
C3V9
- 2
C4V3
C4V7
-
2.5
10 2
10
10 3
I z (
m
A)
T j =25to150
C.
Fig.2 Temperature coefficient as a function of working current; typical values.
MGL742
MBG781
12
300
handbook, halfpage
handbook, halfpage
C15
S z
(mV/K)
I F
(mA)
8
C12
C10
200
4
C8V2
C6V8
C6V2
C5V6
100
0
C5V1
-
4
0
10 2
10 3
10
0.6
0.8
1.0
I z ( m A)
V F (V)
T j =25to150
C.
T j =25
°
C.
Fig.3 Temperature coefficient as a function of
working current; typical values.
Fig.4 Forward current as a function of forward
voltage; typical values.
1999 Oct 20
5
°
°
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