EMIF03-SIM01F2.pdf

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3 LINES EMI FILTER INCLUDING ESD PROTECTION
®
EMIF03-SIM01F2
IPAD™
3 LINES EMI FILTER
INCLUDING ESD PROTECTION
MAIN PRODUCT APPLICATIONS:
EMI filtering and ESD protection for:
SIM Interface (Subscriber Identify Module)
UIM Interface (Universal Identify Module)
DESCRIPTION
The EMIF03-SIM01F2 is a highly integrated
devices designed to suppress EMI/RFI noise in all
systems subjected to electromagnetic interfer-
ences. The EMIF03 flip chip packaging means the
package size is equal to the die size.
This filter includes an ESD protection circuitry
which prevents the device from destruction when
subjected to ESD surges up 15kV.
BENEFITS
Flip-Chip
(8 Bumps)
EMI symmetrical (I/O) low-pass filter
Table 1: Order Code
Part Number
Marking
High efficiency in EMI filtering
EMIF03-SIM01F2
FC
Lead free package
Very low PCB space consuming:
1.42mm x 1.42mm
Figure 1: Pin Configuration (Ball side)
Very thin package: 0.65 mm
High efficiency in ESD suppression
3
2
1
High reliability offered by monolithic integration
High reducing of parasitic elements through
integration & wafer level packaging.
RST
in
RST
out
A
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4
CLT
in
Gnd
CLT
out
B
15kV (air discharge)
8kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
Data
in
V CC
Data
out
C
Figure 2: Configuration
V CC
100
RST in
R1
RST out
47
CLK in
R2
CLK out
100
Data in
Data out
R3
Cline = 35pF max.
GND
TM: IPAD is a trademark of STMicroelectronics.
December 2004
REV. 2
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EMIF03-SIM01F2
Table 2: Absolute Ratings (limiting values)
Symbol
Parameter and test conditions
Value
Unit
T j
Maximum junction temperature
125
°C
T op
Operating temperature range
- 40 to + 85
°C
T stg
Storage temperature range
- 55 to + 150
°C
Table 3: Electrical Characteristics (T amb = 25°C)
Symbol Parameter
V BR Breakdown voltage
I RM Leakage current @ V RM
V RM Stand-off voltage
V CL Clamping voltage
R d Dynamic impedance
I PP Peak pulse current
R I/O Series resistance between Input &
Output
C line Input capacitance per line
I
I F
V CL
V BR
V RM
V F
V
I RM
I R
I PP
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V BR
I R = 1 mA
6
V
I RM
V RM = 3V per line
1
µA
R d
1.5
R 1
95
100
105
R 2
44.65
47
49.35
R 3
95
100
105
C line
@ 0V
35
pF
Figure 3: S21 (dB) attenuation measurement
Figure 4: Analog crosstalk measurements
Aplac 7.60 User: STMicroelectronics Feb 22 2001
0.00
dB
dB
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
100.0k
1.0M
10.0M
100.0M
1.0G
f/Hz
MHz
B3_B1(CLK)
A3_A2(RST)
C3_C1(DAT)
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-5.00
-50.00
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EMIF03-SIM01F2
Figure 5:Digitalcrosstalkmeasurement
Figure 6: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
V(in1)
V(out1)
Figure 7: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
Figure 8: Line capacitance versus applied
voltage (typical)
V(in1)
C(pF)
35
30
F=1MHz
Vosc=30mV
Tj=25°C
25
20
V(out1)
15
10
VR(V)
0
1
2
3
4
5
6
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EMIF03-SIM01F2
Figure 9: Aplac model
Rseries
Port1
50
Port2
50
DEMIF03 diodes Model
- RS = 1.2
- CJO = 17p
- M = 0.3333
- VJ = 0.6
- ISR = 100p
- BV = 6.8
- IBV = 1m
- TT = 100n
MODEL = demif03
MODEL = demif03
sub
sub
Vcc
50p
DEMIF03_Vcc diode Model
- RS = 1.5
- CJO = 20p
- M = 0.3333
- VJ = 0.6
- ISR = 100p
- BV = 6.8
- IBV = 1m
- TT = 100n
0.05
MODEL = demif03_Vcc
0.08nH
Rseries= 47R (CLK line)
= 100R (RST & Data lines)
sub
0.1
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EMIF03-SIM01F2
Figure 10: Ordering Information Scheme
EMIF yy - xxx zz Fx
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip-Chip
x = 1: 500µm, Bump = 315µm
= 2: Leadfree Pitch = 500µm, Bump = 315µm
= 3: Leadfree Pitch = 400µm, Bump = 250µm
Figure 11: FLIP-CHIP Package Mechanical Data
500µm ± 50
650µm ± 65
315µm ± 50
1.42mm ± 50µm
Figure 12: Foot print recommendations
Figure 13: Marking
3 65
240
Dot, ST logo
xx = marking
Copper pad Diameter :
250µm recommended , 300µm max
z = packaging
location
yww = datecode
(y = year
ww = week)
E
Solder stencil opening : 330µm
Solder mask opening recommendation :
340µm min for 315µm copper pad diameter
x
y
x
w
z
w
All dimensions in µm
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