IRF7413.PDF

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SO-8
Absolute Maximum Ratings
Symbol
Parameter
Max
30
± 20
13
Units
V DS
Drain-to-Source Voltage
V
V GS
Gate-to-Source Voltage
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
I D @ T A = 70°C
Continuous Drain Current, V GS @ 10V
9.2
A
I DM
Pulsed Drain Current
58
2.5
P D @T A = 25°C
Power Dissipation
W
Linear Derating Factor
0.02
260
mW/°C
E AS
Single Pulse Avalanche Energency
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T J, T STG
Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance Ratings
Symbol
Parameter
Typ
Max
Units
R θ JL
Junction-to-Drain Lead
–––
20
°C/W
R θ JA
Junction-to-Ambient
–––
50
A
647851020.030.png 647851020.031.png 647851020.032.png
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typxits
Conditions
V GS = 0V, I D = 250µA
Reference to 25°C, I D = 1mA
V (BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ V (BR)DSS / ∆ T J Breakdown Voltage Temp. Coefficient
–––
0.034
–––
V/°C
R DS(on)
–––
–––
0.011
V GS = 10V, I D = 7.3A
Static Drain-to-Source On-Resistance
Ω
–––
–––
0.018
V GS = 4.5V, I D = 3.7A
V GS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
V DS = V GS , I D = 250µA
g fs
Forward Transconductance
10
–––
–––
S
V DS = 10V, I D = 3.7A
I DSS
Drain-to-Source Leakage Current
–––
–––
12
µA
V DS = 30V, V GS = 0V
V DS = 24V, V GS = 0V, T J = 125°C
–––
–––
25
I GSS
Gate-to-Source Forward Leakage
–––
–––
-100
V GS = -20V
V GS = 20V
nA
Gate-to-Source Reverse Leakage
–––
–––
100
Q g
Total Gate Charge
–––
52
79
I D = 7.3A
V DS = 24V
Q gs
Gate-to-Source Charge
–––
6.1
9.2
nC
Q gd
Gate-to-Drain ("Miller") Charge
–––
16
23
V GS = 10V, See Fig. 6 and 9
R G
Gate Resistance
1.2
–––
3.7
t d(on)
Turn-On Delay Time
–––
8.6
–––
V DD = 15V
I D = 7.3A
t r
Rise Time
–––
50
–––
ns
t d(off)
Turn-Off Delay Time
–––
52
–––
R G = 6.2 Ω
t f
Fall Time
–––
46
–––
R G = 2.0 Ω, See Fig. 10
V GS = 0V
C iss
Input Capacitance
–––
1800
–––
C oss
Output Capacitance
–––
680
–––
pF
V DS = 25V
C rss
Reverse Transfer Capacitance
–––
240
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
3.1
MOSFET symbol
showing the
integral reverse
p-n junction diode.
A
I SM
–––
–––
58
V SD
Diode Forward Voltage
–––
–––
1.0
V
T J = 25°C, I S = 7.3A, V GS = 0V
T J = 25°C, I F = 7.3A
di/dt = 100A/µs
t rr
Reverse Recovery Time
–––
74
110
ns
Q rr
Reverse Recovery Charge
–––
200
300
nC
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I SD ≤
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.+
5
≤
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≤
6
Ω
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θ * 0,-
647851020.033.png 647851020.001.png 647851020.002.png 647851020.003.png 647851020.004.png
 
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
10
3.0V
3.0V
1
20µs PULSE WIDTH
T = 25°C
A
1
20µs PULSE WIDTH
T = 150°C
J
A
0.1
1
10
0.1
1
10
V , Drain-to-Source Voltage (V)
V , Drain-to-Source Voltage (V)
100
2.0
I = 7.3A
D
1.5
T = 150°C
J
T = 25°C
J
10
1.0
0.5
V = 10V
20µs PULSE WIDTH
DS
V = 10V
GS
1
A
0.0
A
3.0
3.5
4.0
4.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
V , Gate-to-Source Voltage (V)
J
DS
DS
GS
647851020.005.png 647851020.006.png
3200
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
20
I = 7.3A
GS
iss gs gd ds
rss gd
oss ds gd
D
2800
V = 24V
V = 15V
C iss
16
2400
2000
C oss
12
1600
1200
8
800
C rss
4
400
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
A
1
10
100
0
10
20
30
40
50
60
V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
$
$
100
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
T = 25°C
J
T = 150°C
J
100
10
100us
10
1ms
T
C
= 25 C
°
10ms
T
= 150 C
°
J
Single Pulse
V = 0V
1
A
1
0.1
1
10
100
0.4
1.2
2.0
2.8
3.6
V , Drain-to-Source Voltage (V)
V , Source-to-Drain Voltage (V)
DS
!" #
DS
DS
DS
GS
SD
647851020.007.png 647851020.008.png 647851020.009.png 647851020.010.png 647851020.011.png
Q G
)
-.
)
89*
Q GS
Q GD
+
-
)
V G
)
≤ 1
Charge
≤ 0.1 %
,$ +&
Current Regulator
Same Type as D.U.T.
50K Ω
V DS
90%
12V
.2 µ F
.3 µ F
D.U.T.
+
-
V DS
V GS
10%
V GS
3mA
t d(on) t r
t d(off) t f
I G
I D
Current Sampling Resistors
$
+&
100
D = 0.50
10
0.20
0.10
0.05
0.02
P
DM
1
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D = t / t
2. Peak T = P
1 2
J
DM
x Z
thJA
+ T
A
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
!"%&'()#*
t
t
1
647851020.012.png 647851020.013.png 647851020.014.png 647851020.015.png 647851020.016.png 647851020.017.png 647851020.018.png 647851020.019.png 647851020.020.png 647851020.021.png 647851020.022.png 647851020.023.png 647851020.024.png 647851020.025.png 647851020.026.png 647851020.027.png 647851020.028.png 647851020.029.png

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