BC327_3.pdf
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PNP general purpose transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC327
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 15
Philips Semiconductors
Product specification
PNP general purpose transistor
BC327
FEATURES
PINNING
·
High current (max. 500 mA)
PIN
DESCRIPTION
·
Low voltage (max. 45 V).
1
emitter
2
base
APPLICATIONS
3
collector
·
General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: BC337.
handbook, halfpag
1
2
3
3
2
MAM281
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
500
mA
I
CM
peak collector current
-
-
1
A
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C; note 1
-
625
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15
2
Philips Semiconductors
Product specification
PNP general purpose transistor
BC327
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
0.2
K/mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
20 V
-
-
-
100 nA
I
E
= 0; V
CB
=
-
20 V; T
j
= 150
°
C
-
-
-
5
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5V
-
-
-
100 nA
h
FE
DC current gain
I
C
=
-
100 mA; V
CE
=
-
1V;
see Figs 2, 3 and 4
BC327
100
-
600
BC327-16
100
-
250
BC327-25
160
-
400
BC327-40
250
-
600
h
FE
DC current gain
I
C
=
-
500 mA; V
CE
=
-
1V;
40
-
-
see Figs 2, 3 and 4
V
CEsat
collector-emitter saturation voltage I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
-
700 mV
V
BE
base-emitter voltage
I
C
=
-
500 mA; V
CE
=
-
1 V; note 1
-
-
-
1.2 V
C
c
collector capacitance
I
E
=i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
10
-
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5V;
80
-
-
MHz
f = 100 MHz
Note
1. V
BE
decreases by about
-
2 mV/K with increasing temperature.
1999 Apr 15
3
°
Philips Semiconductors
Product specification
PNP general purpose transistor
BC327
MBH717
250
handbook, full pagewidth
h
FE
200
V
CE
=
-
1 V
150
100
50
0
-
10
-
1
-
10
2
-
10
3
-
1
-
10
I
C
(mA)
BC327-16.
Fig.2 DC current gain; typical values.
MBH718
500
handbook, full pagewidth
h
FE
400
V
CE
=
-
1 V
300
200
100
10
-
1
10
2
10
3
1
10
-
-
-
-
I
C
(mA)
-
BC327-25.
Fig.3 DC current gain; typical values.
1999 Apr 15
4
0
Philips Semiconductors
Product specification
PNP general purpose transistor
BC327
MBH719
500
handbook, full pagewidth
h
FE
400
V
CE
=
-
1 V
300
200
100
0
-
10
-
1
-
10
2
-
10
3
-
1
-
10
I
C
(mA)
BC327-40.
Fig.4 DC current gain; typical values.
1999 Apr 15
5
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