AF4920N.pdf

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Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Features
General Description
-Low r DS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r DS(on) assures
minimal power loss and conserves energy, making
this device ideal for using in the power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery chargers, telecommunication power
systems, and telephone power systems.
Product Summary
V DS (V)
r DS(on) (mΩ)
I D (A)
30
25@V GS =10V
6.9
35@V GS =4.5V
5.8
Pin Descriptions
Pin Assignments
Pin Name
Description
S
1
8
D
S
Source
G
2
7
D
G
Gate
S
3
6
D
D
Drain
G
4
5
D
SOP-8
Ordering information
A X 4920N X X X
Feature
F :MOSFET
PN
Package
Lead Free
Blank : Normal
L : Lead Free Package
Packing
S: SOP-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
1/5
Rev. 1.0 Oct 15, 2004
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Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Absolute Maximum Ratings (T A =25ºC unless otherwise noted)
Symbol
Parameter
Rating
Units
V DS
Drain-Source Voltage
30
V
V GS
Gate-Source Voltage
±20
V
I D
Continuous Drain Current (Note 1) T A =70ºC
T A =25ºC
±6.9
A
±5.5
I DM
Pulsed Drain Current (Note 2)
±40
A
I S
Continuous Source Current (Diode Conduction) (Note 1)
1.7
A
P D
Power Dissipation (Note 1)
T A =25ºC
2.1
W
T A =70ºC
1.3
T J , T STG Operating Junction and Storage Temperature Range
-55 to 150
ºC
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
R θJC
Maximum Junction-to-Case (Note 1)
t ≤ 5 sec
40
ºC/W
R θJA
Maximum Junction-to-Ambient (Note 1)
t ≤ 5 sec
60
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (T A =25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Limits
Unit
Min.
Typ. Max.
Static
V (BR)DSS Drain-SourceBreakdownVoltage
V GS = 0V, I D =250uA
30
-
-
V
V GS(th) Gate-ThresholdVoltage
V DS = V GS , I D =250uA
1
1.5
3.0
V
I GSS Gate-Body Leakage
V DS =0V, V GS =±20V
-
-
±100 nA
V DS =24V, V GS =0V
-
-
1
I DSS Zero Gate Voltage Drain Current
V DS =24V, V GS =0V,
T J =55ºC
uA
-
-
10
I D(on) On-State Drain Current (Note 3)
V DS =5V, V GS =10V
20
-
-
A
V GS =10V, I D =6.9A
-
20
25
r DS(on) Drain-SourceOn-Resistance (Note 3)
V GS =4.5V, I D =6.8A
-
26
35
mΩ
V GS =10V, I D =6.9A,
T J =55ºC
-
22.0
28
g fs
Forward Transconductance (Note 3)
V DS =15V, I D =6.9A
-
25
-
S
V SD Diode Forward Voltage
I S =1.7A, V GS =0V
-
1.0
1.2
V
Dynamic (Note 4)
Q g
Total Gate Charge
V DS =15V, V GS =4.5V,
I D =6.9A
-
4.7
8
Q gs Gate-Source Charge
-
1.7
-
nC
Q gd Gate-Drain Charge
-
1.4
-
Switching
t d(on) Turn-On Delay Time
-
12
20
t r
Rise Time
V DD =15V, R L =15Ω,
I D =1A, V GEN =10V
-
10
20
t d(off) Turn-Off Delay Time
-
60
90
nS
t f
Fall-Time
-
15
30
t rr
Source-Drain Reverse Recovery Time I F =1.7A, Di/Dt=100A/us
-
50
90
Note 3: Pulse test: PW ≤ 300us duty cycle ≤ 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
2/5
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Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
3/5
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Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
4/5
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Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Marking Information
SOP-8L
( Top View )
8
Logo
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Part Number
4 9 2 0 N
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
Factory code
Package Information
Package Type: SOP-8L
L
VIEW "A "
D
0.015x45
7 (4X)
7 (4X)
e
B
VIEW "A"
y
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
A
1.40
1.60
1.75
0.055
0.063
0.069
A1
0.10
-
0.25
0.040
-
0.100
A2
1.30
1.45
1.50
0.051
0.057
0.059
B
0.33
0.41
0.51
0.013
0.016
0.020
C
0.19
0.20
0.25
0.0075
0.008
0.010
D
4.80
5.05
5.30
0.189
0.199
0.209
E
3.70
3.90
4.10
0.146
0.154
0.161
e
-
1.27
-
-
0.050
-
H
5.79
5.99
6.20
0.228
0.236
0.244
L
0.38
0.71
1.27
0.015
0.028
0.050
y
-
-
0.10
-
-
0.004
θ
0 O
-
8 O
0 O
-
8 O
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
5/5
Lot code:
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