AF4920N.pdf
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Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Features
General Description
-Low r
DS(on)
Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for using in the power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery chargers, telecommunication power
systems, and telephone power systems.
Product Summary
V
DS
(V)
r
DS(on)
(mΩ)
I
D
(A)
30
25@V
GS
=10V
6.9
35@V
GS
=4.5V
5.8
Pin Descriptions
Pin Assignments
Pin Name
Description
S
1
8
D
S
Source
G
2
7
D
G
Gate
S
3
6
D
D
Drain
G
4
5
D
SOP-8
Ordering information
A X 4920N X X X
Feature
F :MOSFET
PN
Package
Lead Free
Blank : Normal
L : Lead Free Package
Packing
S: SOP-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
1/5
Rev. 1.0 Oct 15, 2004
Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Absolute Maximum Ratings
(T
A
=25ºC unless otherwise noted)
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
30
V
V
GS
Gate-Source Voltage
±20
V
I
D
Continuous Drain Current
(Note 1)
T
A
=70ºC
T
A
=25ºC
±6.9
A
±5.5
I
DM
Pulsed Drain Current
(Note 2)
±40
A
I
S
Continuous Source Current (Diode Conduction)
(Note 1)
1.7
A
P
D
Power Dissipation
(Note 1)
T
A
=25ºC
2.1
W
T
A
=70ºC
1.3
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
ºC
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
R
θJC
Maximum Junction-to-Case
(Note 1)
t
≤
5 sec
40
ºC/W
R
θJA
Maximum Junction-to-Ambient
(Note 1)
t
≤
5 sec
60
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Limits
Unit
Min.
Typ. Max.
Static
V
(BR)DSS
Drain-SourceBreakdownVoltage
V
GS
= 0V, I
D
=250uA
30
-
-
V
V
GS(th)
Gate-ThresholdVoltage
V
DS
= V
GS
, I
D
=250uA
1
1.5
3.0
V
I
GSS
Gate-Body Leakage
V
DS
=0V, V
GS
=±20V
-
-
±100 nA
V
DS
=24V, V
GS
=0V
-
-
1
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V,
T
J
=55ºC
uA
-
-
10
I
D(on)
On-State Drain Current
(Note 3)
V
DS
=5V, V
GS
=10V
20
-
-
A
V
GS
=10V, I
D
=6.9A
-
20
25
r
DS(on)
Drain-SourceOn-Resistance
(Note 3)
V
GS
=4.5V, I
D
=6.8A
-
26
35
mΩ
V
GS
=10V, I
D
=6.9A,
T
J
=55ºC
-
22.0
28
g
fs
Forward Transconductance
(Note 3)
V
DS
=15V, I
D
=6.9A
-
25
-
S
V
SD
Diode Forward Voltage
I
S
=1.7A, V
GS
=0V
-
1.0
1.2
V
Dynamic
(Note 4)
Q
g
Total Gate Charge
V
DS
=15V, V
GS
=4.5V,
I
D
=6.9A
-
4.7
8
Q
gs
Gate-Source Charge
-
1.7
-
nC
Q
gd
Gate-Drain Charge
-
1.4
-
Switching
t
d(on)
Turn-On Delay Time
-
12
20
t
r
Rise Time
V
DD
=15V, R
L
=15Ω,
I
D
=1A, V
GEN
=10V
-
10
20
t
d(off)
Turn-Off Delay Time
-
60
90
nS
t
f
Fall-Time
-
15
30
t
rr
Source-Drain Reverse Recovery Time I
F
=1.7A, Di/Dt=100A/us
-
50
90
Note 3:
Pulse test: PW
≤
300us duty cycle
≤
2%.
Note 4:
Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
2/5
Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
3/5
Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
4/5
Dual N-Channel 30-V (D-S) MOSFET
AF4920N
Marking Information
SOP-8L
( Top View )
8
Logo
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Part Number
4 9 2 0 N
AA Y
W
X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
Factory code
Package Information
Package Type: SOP-8L
L
VIEW "A
"
D
0.015x45
7 (4X)
7 (4X)
e
B
VIEW "A"
y
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
A
1.40
1.60
1.75
0.055
0.063
0.069
A1
0.10
-
0.25
0.040
-
0.100
A2
1.30
1.45
1.50
0.051
0.057
0.059
B
0.33
0.41
0.51
0.013
0.016
0.020
C
0.19
0.20
0.25
0.0075
0.008
0.010
D
4.80
5.05
5.30
0.189
0.199
0.209
E
3.70
3.90
4.10
0.146
0.154
0.161
e
-
1.27
-
-
0.050
-
H
5.79
5.99
6.20
0.228
0.236
0.244
L
0.38
0.71
1.27
0.015
0.028
0.050
y
-
-
0.10
-
-
0.004
θ
0
O
-
8
O
0
O
-
8
O
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Oct 15, 2004
5/5
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