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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMH11
NPN resistor-equipped double
transistor
Product specification
Supersedes data of 1998 Nov 26
1999 Apr 13
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH11
FEATURES
·
Transistors with built-in bias resistors R1 and R2
(typ. 10 k
W
each)
·
No mutual interference between the transistors
·
Simplification of circuit design
handbook, halfpage
6
5
4
·
Reduces number of components and board space.
6
5
4
R1 R2
TR2
TR1
APPLICATIONS
·
R2
R1
Especially suitable for space reduction in interface and
driver circuits
1
2
3
Top view
MAM342
1
2
3
·
Inverter circuit configurations without use of external
resistors.
DESCRIPTION
Fig.1 Simplified outline (SC-88) and symbol.
NPN resistor-equipped double transistor in an SC-88
plastic package.
MARKING
TYPE NUMBER
MARKING CODE
PUMH11
Ht1
2, 5
6, 3
1, 4
PINNING
MBK120
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
Fig.2 Equivalent inverter symbol.
6, 3
collector
TR1; TR2
1999 Apr 13
2
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH11
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
10
V
V
I
input voltage
positive
-
+40
V
negative
-
-
10
V
I
O
output current (DC)
-
100
mA
I
CM
peak collector current
-
100
mA
P
tot
total power dissipation
T
amb
£
25
°
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
Per device
P
tot
total power dissipation
T
amb
£
25
°
C; note 1
-
300
mW
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 13
3
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH11
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
416
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Per transistor
I
CBO
collector cut-off current
I
E
= 0; V
CB
=50V
-
-
100
nA
I
CEO
collector cut-off current
I
B
= 0; V
CE
=30V
-
-
1
m
A
I
B
= 0; V
CE
=30V; T
j
= 150
°
C
-
-
50
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=5V
-
-
400
m
A
h
FE
DC current gain
I
C
= 5 mA; V
CE
=5V
30
-
-
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
-
150
mV
V
i(off)
input-off voltage
I
C
= 100
m
A; V
CE
=5V
-
1.1
0.8
V
V
i(on)
input-on voltage
I
C
= 10 mA; V
CE
= 0.3 V
2.5
1.8
-
V
R1
input resistor
7
10
13
k
W
R2
R1
resistor ratio
0.8
1
1.2
C
c
collector capacitance
I
E
=i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
-
2.5
pF
1999 Apr 13
4
°
-------
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH11
10
3
MGM898
MGM897
1
handbook, halfpage
handbook, halfpage
h
FE
(1)
V
CEsat
(V)
(2)
10
2
(3)
10
-
1
(1)
(2)
(3)
10
1
10
-
2
10
-
1
1
10
10
2
1
10
I
C
(mA)
10
2
I
C
(mA)
C.
(2) T
amb
=25
°
C.
(3) T
amb
=
°
I
C
/I
B
= 20.
(1) T
amb
= 100
°
C.
(2) T
amb
=25
C.
(3) T
amb
=
-
40
°
C.
°
-
40
°
C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
10
MGM900
10
2
MGM899
handbook, halfpage
handbook, halfpage
V
i(off)
(V)
V
i(on)
(V)
10
(1)
1
(2)
(3)
(1) (2) (3)
1
10
-
1
10
-
1
10
-
2
10
-
1
10
-
1
10
2
1
10
1
10
I
C
(mA)
I
C
(mA)
C.
(2) T
amb
=25
°
C.
(3) T
amb
= 100
-
40
°
C.
(2) T
amb
=25
°
C.
(3) T
amb
= 100
-
40
°
°
C.
°
C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 Apr 13
5
V
CE
=5V.
(1) T
amb
= 150
V
CE
=5V.
(1) T
amb
=
V
CE
= 0.3 V.
(1) T
amb
=
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