PDTA114TU.pdf

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PDTA114TU
PNP resistor-equipped transistor
Product specification
Supersedes data of 1998 May 15
1999 Apr 13
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Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA114TU
FEATURES
·
Built-in bias resistor R1(typ. 10 k W )
·
Simplification of circuit design
3
handbook, 4 columns
Reduces number of components
and board space.
·
3
R1
1
APPLICATIONS
·
Especially suitable for space
reduction in interface and driver
circuits
2
1
Top view
2
MAM278
·
Inverter circuit configurations
without use of an external resistor.
Fig.1 Simplified outline (SOT323) and symbol.
DESCRIPTION
PNP resistor-equipped transistor in a
SOT323 plastic package.
NPN complement: PDTC114TU.
MARKING
TYPE
NUMBER
MARKING
CODE (1)
1
3
PINNING
2
PDTA114TU
*
23
PIN
DESCRIPTION
MGA893 - 1
Note
1.
1
base/input
Fig.2 Equivalent inverter
symbol.
* = - : Made in Hong Kong.
*
= t : Made in Malaysia.
2
emitter/ground (+)
3
collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
-
50
V
V CEO
collector-emitter voltage
open base
-
-
50
V
V EBO
emitter-base voltage
open collector
-
- 5
V
I O
output current (DC)
-
-
100
mA
I CM
peak collector current
-
-
100
mA
P tot
total power dissipation
T amb £
25
°
C; note 1
-
200
mW
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 13
2
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Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA114TU
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T amb =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
50 V
-
-
-
100 nA
I CEO
collector cut-off current
I B = 0; V CE =
-
30 V
-
-
-
1
m
A
I B = 0; V CE =
-
30 V; T j = 150
°
C
-
-
-
50
m
A
I EBO
emitter cut-off current
I C = 0; V EB = - 5V
-
-
- 100 nA
h FE
DC current gain
I C =
-
1 mA; V CE =
-
5 V
200
-
-
V CEsat
collector-emitter saturation voltage I C =
-
10 mA; I B =
-
0.5 mA
-
-
-
150 mV
R1
input resistor
7
10
13
k
W
C c
collector capacitance
I E =i e = 0; V CB = - 10 V; f = 1 MHz
-
-
3
pF
600
MBK784
-
1
MBK783
handbook, halfpage
handbook, halfpage
h FE
(1)
V CEsat
(V)
400
(1)
(2)
-
10 - 1
(2)
(3)
200
(3)
0
-
- 10 - 2
10 - 1
10 2
10 - 1
-
1
-
10
10 2
-
-
1
-
10
-
I C (mA)
I C (mA)
5V.
(1) T amb = 150 ° C.
(2) T amb =25 ° C.
(3) T amb =
-
I C /I B = 10.
(1) T amb = 100 ° C.
(2) T amb =25 ° C.
(3) T amb =
-
40
°
C.
-
40
°
C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1999 Apr 13
3
°
-
V CE =
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Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA114TU
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max
b p
c
D E
e
e 1
E
L p
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT323
SC-70
97-02-28
1999 Apr 13
4
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Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA114TU
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 13
5
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