T820W_T830W.pdf

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SNUBBERLESS TRIAC
)
T820W
T830W
SNUBBERLESS TRIAC
FEATURES
I TRMS =8A
V DRM =V RRM = 400V to 700V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V (RMS)
U.L. RECOGNIZED : E81734
A 2
A 1
G
DESCRIPTION
The T820/830W triacs use high performance glass
passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESS TM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
A 1
A 2
G
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I T(RMS)
RMS on-state current
(360 ° conduction angle)
Tc= 95 ° C
8
A
I TSM
Non repetitive surge peak on-state current
(T j initial = 25 ° C)
tp = 16.7 ms
(1 cycle, 60 Hz)
88
A
tp = 10 ms
(1/2 cycle, 50 Hz)
100
I 2 t
I 2 t Value (half-cycle, 50 Hz)
tp = 10 ms
50
A 2 s
dI/dt
Critical rate of rise of on-state current
Gate supply : I G = 500 mA
Repetitive
F = 50 Hz
20
A/ m s
dI G /dt = 1 A/ m s.
Non Repetitive
100
T stg
T j
Storage temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
° C
Tl
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
260
C
Symbol
Parameter
T820 / 830-xxxW
Unit
400
600
700
V DRM
V RRM
Repetitive peak off-state voltage
T j = 125
400
600
700
V
C
April 1995
1/5
°
°
383885123.002.png
T820W / 830W
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
50
°
C/W
Rth(j-c)
Junction to case for A.C (360 ° conduction angle)
3.1
° C/W
GATE CHARACTERISTICS (maximum values)
P G (AV) =1W P GM =10W(tp =20
m
s)
I GM =4A(tp=20
m
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T820
T830
Unit
I GT
V D =12V (DC) R L =33 W
Tj= 25
°
C
I-II-III
MAX
20
30
mA
V GT
V D =12V (DC) R L =33
W
Tj= 25
°
C
I-II-III
MAX
1.5
V
V GD
V D =V DRM R L =3.3k
W
Tj= 125
°
C I-II-III
MIN
0.2
V
tgt
V D =V DRM I G = 500mA
dl G /dt= 3A
Tj= 25 ° C
I-II-III
TYP
2
m s
m
s
I H *
I T = 100mA
Gate open
Tj= 25 ° C
MAX
35
50
V TM *
I TM = 11A tp= 380
m
s
Tj= 25
°
C
MAX
1.5
V
I DRM
I RRM
VDRM rated
V RRM rated
Tj= 25 ° C
MAX
10
m A
Tj= 125
°
C
MAX
2
mA
dV/dt *
Linear slope up to
V D =67%V DRM
Tj= 125
°
C
MIN
200
300
V/
m
s
Gate open
(dV/dt)c * (dI/dt)c = 4.5 A/ms (see note) Tj= 125
°
C
MIN
10
20
V/
m
s
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/
m
s, and, therefore, it is unnecessary to use
a snuber R-C network accross T820W / T830W triacs.
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)
s
383885123.003.png
T820W / 830W
Fig.1 : Maximum power dissipation versus RMS
on-state current.
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
P(W)
Tcase ( C)
o
10
= 180 o
=120 o
=90 o
=60 o
10
-90
180 O
8
8
-95
-100
6
6
Rth = 0 C/W
2.5 C/W
5C/W
7.5 C/W
o
-105
o
o
4
=30 o
4
o
-110
-115
2
2
-120
I
T(RMS)
(A)
Tamb ( C)
o
0
0
-125
0
1
2
3
4
5
6
7
8
0 102030405060708090100110120130
Fig.3 : RMS on-state current versus case tempera-
ture.
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
T(RMS)
(A)
Zth/Rth
10
1
Zth (j-c)
8
=180 o
0.1
6
Zt h( j-a )
4
0.01
2
Tcase( C)
o
tp (s )
0
0 102030405060708090100110120130
1E-3
1E-2
1E-1
1E +0
1E+1
1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
I
TSM
(A)
o
o
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj initial = 25 C
o
80
Igt
60
Ih
40
20
Tj( C)
o
Number of cycles
0
-40 -20
0
20 40
60
80 100 120 140
1
10
100
1000
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)
I
383885123.004.png
T820W / 830W
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
Fig.8 : On-state characteristics (maximum values).
3
10ms, and
corresponding value of I 2 t.
I
TSM
(A). I 2 t(A 2 s)
I
TM
(A)
1000
1000
Tj initial = 25 o
I TSM
Tj ini tial
25 o
100
100
I 2 t
10
Tj max
10
Tj max
Vto =0.9V
Rt =0.048
1
tp(ms)
V (V)
TM
1
0.1
1
10
00.511.522.533.544.555.56
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)
383885123.005.png
T820W / 830W
PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
10
10.4
0.393
0.409
B
15.9
16.4
0.626
0.645
B1
9.8
10.6
0.385
0.417
C
28.6
30.6
1.126
1.204
D
16 typ
0.630 typ
E
9
9.3
0.354
0.366
H
4.4
4.6
0.173
0.181
I
3
3.2
0.118
0.126
J
2.5
2.7
0.098
0.106
L
0.4
0.7
0.015
0.027
M
2.5
2.75
0.098
0.108
N
4.95
5.2
0.195
0.204
N1
2.4
2.7
0.094
0.106
O
1.15
1.7
0.045
0.067
P
0.75
1
0.030
0.039
Cooling method : C
Marking : Type number
Weight : 2.1g
Recommended torque value : 0.55 m.N.
Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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