S40XXXH.pdf

(61 KB) Pobierz
SCR
)
S40xxxH
SCR
FEATURES
I T(RMS) =40A
V DRM = 200V to 800V
High surge current capability
K
A
G
DESCRIPTION
The S40xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I T(RMS)
RMS on-state current
(180 ° conduction angle)
Tc= 85
°
C
40
A
I T(AV)
Average on-state current
(180 ° conduction angle)
Tc= 85 ° C
25
A
I TSM
Non repetitive surge peak on-state current
(T j initial = 25 ° C)
tp = 8.3 ms
415
A
tp = 10 ms
380
I 2 t
I 2 t Value for fusing
tp = 10 ms
722
A 2 s
dI/dt
Critical rate of rise of on-state current
I G = 100 mA
100
A/
m
s
di G /dt = 1 A/ m s.
T stg
T j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
°
C
Tl
Maximum lead temperature for soldering during 10s at
4.5mm from case
260
°
C
Symbol
Parameter
Voltage
Unit
B
DMN
V DRM
V RRM
Repetitive peak off-state voltage
T j = 125 ° C
200
400
600
800
V
January 1995
1/5
383892170.002.png
S40xxxH
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
60
°
C/W
Rth(j-c)
Junction to case for DC
1.1
° C/W
GATE CHARACTERISTICS (maximum values)
P G (AV) =1W P GM =10W(tp =20
m
s)
I GM =4A(tp=20
s)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Sensitivity
Unit
14
16
I GT
V D =12V (DC) R L =33
W
Tj= 25
°
C MIN
30
20
mA
MAX
75
50
V GT
V D =12V (DC) R L =33 W
Tj= 25 ° C MAX
1.5
V
V GD
V D =V DRM R L =3.3k W
Tj= 125 ° C MIN
0.2
V
tgt
V D =V DRM I TM =3xI T(AV )
dI G /dt = 1.5A/
Tj= 25 ° C TYP
2
m s
m
s G = 200mA
I H
I T = 500mA Gate open
Tj= 25 ° C MAX
115
100
mA
I L
I G =1.2 I GT
Tj= 25
°
C MAX
230
200
mA
V TM
I TM = 80A tp= 380 m s
Tj= 25 ° C MAX
1.6
V
I DRM
I RRM
V D =V DRM
V R =V RRM
Tj= 25 ° C MAX
10
m A
Tj= 110 ° C MAX
3
mA
dV/dt
V D =67%V DRM Gate open
Tj= 110 ° C MIN
750
500
V/ m s
tq
I TM =3xI T(AV )V R =35V
dI/dt=25A/
Tj= 110 ° C MAX
100
m s
m
s tp=100
m
s
dV/dt=25V/ m s
V D = 67%V DRM
ORDERING INFORMATION
S06MH
SCR MESA GLASS
PACKAGE :
H = TO220 Non-insulated
VOLTAGE
CURRENT
SENSITIVITY
2/5
)
m
383892170.003.png
S40xxxH
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
P (W)
Tcase ( C)
o
40
40
o
-80
Rth = 0 C/W
0.5 C/W
1C/W
1. 5 C/W
360 O
o
o
30
DC
30
o
-90
=180 o
20
= 120 o
=90 o
20
-100
= 180 o
-110
=60 o
10
10
=30 o
-120
I
T(AV)
(A)
Tamb ( C)
o
0
0
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100 120 140
Fig.3 : Average on-state current versus case tem-
perature.
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
I
T(AV)
(A)
Zth/Rth
50
1
DC
40
Zt h( j-c )
30
0.1
Zt h( j-a )
= 180 o
20
10
Tcase ( C)
o
tp (s )
0
0.01
0 102030405060708090100110120130
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
I
TSM
(A)
o
o
400
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj initial = 25 C
o
300
Igt
200
Ih
100
Tj( C)
o
Number of cycles
0
-40 -20
0
20 40
60
80 100 120 140
1
10
100
100 0
3/5
)
383892170.004.png
S40xxxH
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
Fig.8 : On-state characteristics (maximum values).
3
10ms, and
corresponding value of I 2 t.
I
TSM
(A). I 2 t(A 2 s)
I
TM
(A)
2000
1000
I TSM
1000
Tj in itial
25 o
I 2 t
100
Tj max
Tj initial = 25 C
o
10
Tj max
Vto =0. 92V
Rt =0.0078
tp(ms)
V (V)
TM
100
1
1
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4/5
)
383892170.005.png
S40xxxH
PACKAGE MECHANICAL DATA
TO220 Non-insulated (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
A
H
A
10.3
0.406
B
6.3 6.5 0.248 0.256
G
J
C
9.1
0.358
I
B
D
12.7
0.500
F
4.2
0.165
C
G
3.0
0.118
O
F
L
H
4.5 4.7
0.177 0.185
I
3.53 3.66
0.139 0.144
P
D
J
1.2 1.3
0.047 0.051
N1
M
L
0.9
0.035
N
M
2.7
0.106
N
5.3
0.209
N1 2.54
0.100
O
1.2 1.4
0.047 0.055
P
1.15
0.045
Marking : type number
Weight : 1.8 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
{
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
)
383892170.001.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin