S525T.pdf

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S525T
N-Channel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
High frequency stages up to 300 MHz
Features
Low feedback capacitance
Low noise figure
1
2
3
94 9280
S525T Marking: LB
Plastic case (SOT 23)
1= Source; 2= Gate; 3= Drain
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Drain source voltage
V DS
20
V
Drain current
I D
30
mA
Gate-source peak current
±
I GSM
10
mA
Total power dissipation T amb
3
60
°
C
P tot
200
mW
Channel temperature
T Ch
150
C
Storage temperature range
T stg
–55 to +150
C
Maximum Thermal Resistance
Parameters
Symbol
Value
Unit
Channel ambient on glass fibre printed board
(25 x 20 x 1.5) mm 3 plated with 35 m Cu
R thChA
450
K/W
TELEFUNKEN Semiconductors
Rev. A1, 18-Apr-96
1 (4)
Integrated gate protection diode
°
°
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S525T
Electrical DC Characteristics
T amb = 25C
Parameters / Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
I D = 10 A, –V GS = 4V
V (BR)DS
20
V
Gate-source breakdown voltage
±
I GS = 10 mA, V DS = 0
±
V (BR)GSS
7.5
12
V
Gate-source leakage current
±
V GS = 6 V, V DS = 0
±
I GSS
50
nA
Drain current
V DS = 10 V, V GS = 0
I DSS
5
14
mA
Gate-source cut-off voltage
V DS = 10 V, I D = 20 A
–V GS(OFF)
2.5
V
Electrical AC Characteristics
V DS = 10 V, I D = 10 mA, f = 1 MHz, T amb = 25C
Parameters / Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward transadmittance
|y 21s |
14
16
mS
Gate input capacitance
C issg
2.7
pF
Feedback capacitance
C rss
25
fF
Noise figure
g S = 2 mS, g L = 0.5 mS, f = 200 MHz
F
1.0
dB
Power gain
g S = 2 mS, g L = 0.5 mS, f = 200 MHz
G ps
25
dB
Output capacitance
C oss
1.0
pF
2 (4)
TELEFUNKEN Semiconductors
Rev. A1, 18-Apr-96
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S525T
Dimensions in mm
95 11346a
TELEFUNKEN Semiconductors
Rev. A1, 18-Apr-96
3 (4)
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S525T
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice .
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
TELEFUNKEN Semiconductors
Rev. A1, 18-Apr-96
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