SD1487.pdf

SD1487

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

. 30 MHz

. COMMON EMITTER

. GOLD METALLIZATION

. P OUT =

100WMIN.WITH12.0dBGAIN

.500 4LFL (M174)

epoxy sealed

ORDER CODE

SD1487

BRANDING

SD1487

PIN CONNECTION

DESCRIPTION

The SD1487 is a 12.5 V Class C epitaxial silicon

NPN planar transistor designed primarily for HF

communications. This device utilizes state-of-the-

art diffused emitter ballasting to achieve extreme

ruggedness under severe operating conditions.

1. Collector

3. Base

2. Emitter

4. Emitter

ABSOLUTE MAXIMUM RATINGS (T case

25 ° C)

Symbol

Parameter

Value

Unit

V CBO

Collector-Base Voltage

V CEO

Collector-Emitter Voltage

V EBO

Emitter-Base Voltage

4.0

I C

Device Current

P DISS

Power Dissipation

290

T J

Junction Temperature

+200

° C

T STG

Storage Temperature

65 to +150

° C

THERMAL DATA

R TH(j-c)

Junction-Case Thermal Resistance

0.6

C/W

November 1992

1/5

. IMD - 30 dB

. 12.5 VOLTS

SD1487

ELECTRICAL SPECIFICATIONS (T case

25 ° C)

STATIC

Symbol

Test Conditions

Value

Unit

Min. Typ. Max.

BV CBO

I C

100mA

I E

0mA

—

BV CES

I C

100mA

V BE

—

BV CEO

I C

100mA

I B

0mA

—

BV EBO

I E

20mA

I C

0mA

4.0

—

I CES

V CE

15V

I E

0mA

—

h FE

V CE

I C

—

200

—

DYNAMIC

Symbol

Test Conditions

Value

Unit

Min. Typ. Max.

P OUT

30 MHz

V CE =

12.5 V

I CQ

150mA

100

—

G P

30 MHz

V CE =

12.5 V

I CQ

150mA

—

IMD 3 *

OUT

100WPEP V CE =

12.5 V

I CQ

150mA

—

30 dBc

C OB

1 MHz

V CB =

12.5 V

—

400

—

*Note: f

30 + 30.001MHz

TYPICAL PERFORMANCE

POWER GAIN & COLLECTOR

EFFICIENCY vs POWER INPUT

IMD vs POWER OUTPUT, PEP

2/5

SD1487

TYPICAL PERFORMANCE (cont’d)

POWER OUTPUT vs POWER INPUT

IMPEDANCE DATA

FREQ.

Z IN (

)

Z CL (

)

30 MHz

0.57 + j 0.78 0.80 + j 0.43

P OUT

100 W PEP

V CE

12.5 V

3/5

SD1487

TEST CIRCUIT

C1 : 9 - 180pF Arco 463

C2 : 5 - 380pF Arco 465

C3 : 200pF Arco 465

C4, C6 : 170pF Arco 469

: Copper Strap 1/4” Widht, Length 1 1/2,

Height 1/2”

: 4 Turns, #16 AWG, Enameled Wire 3/8” I.D.

: 5 Turns, #18 AWG on 1/4” I.D. Coil Form

Length 1/2”, Ferrite Slug

F Ceramic Disc

C5, C8 : 1000pF Unelco

: 0.1

: 10

F Electrolytic, 35Vdc

R1, R2,

: 1.5 Ohm, 1 Watt Carbon

C10

: 1000

F Electrolytic, 35Vdc

: 2 1/2 Turns, #14 AWG, I.D. Loose Wound

: 16 Turns, #16 AWG, Enameled Wire on

Micrometals Torroid #T-94

4/5

SD1487

PACKAGE MECHANICAL DATA

Ref.: Dwg. No.12-0174

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express

written approval of SGS-THOMSON Microelectonics.

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