SD1897.pdf

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1.65 GHZ SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS
SD1897
1.65 GHz SATCOM APPLICATIONS
. 1.65 GHz
. CLASS C OPERATION
. P OUT =
10 W MIN. WITH 11.0 dB GAIN
.250 x .320 2LFL (M170)
epoxy sealed
ORDER CODE
SD1897
BRANDING
1897
PIN CONNECTION
DESCRIPTION
The SD1897 is a 28 V Class C silicon NPN tran-
sistor designed for INMARSAT and other 1.65 GHz
SATCOM applications. A gold metallized emitter-
ballasted die geometry is employed providing high
gain and efficiency while ensuring long term re-
liability and ruggedness under severe operating
conditions. SD1897 is packaged in a cost-effective
epoxy sealed housing.
1. Collector
3. Base
2. Emitter
ABSOLUTE MAXIMUM RATINGS (T case
=
25 ° C)
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage
45
V
V CEO
Collector-Emitter Voltage
15
V
V EBO
Emitter-Base Voltage
3.5
V
I C
Device Current
2.3
A
P DISS
Power Dissipation
29
W
T J
Junction Temperature
+200
° C
T STG
Storage Temperature
-
65 to +150
° C
THERMAL DATA
R TH(j-c)
Junction-Case Thermal Resistance
6.0
°
C/W
July 1993
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RF & MICROWAVE TRANSISTORS
. 28 VOLTS
. COMMON BASE
383843785.001.png
SD1897
ELECTRICAL SPECIFICATIONS (T case
=
25 ° C)
STATIC
Symbol
Test Conditions
Value
Unit
Min. Typ. Max.
BV CBO I C
=
3mA
I E
=
0mA
45
—
—
V
BV CEO I C
=
3mA
I B
=
0mA
12
—
—
V
BV EBO I E
=
3mA
I C
=
0mA
3.5
—
—
V
h FE
V CE
=
5V
I C
=
600mA
15
—
150
—
DYNAMIC
Symbol
Test Conditions
Value
Unit
Min. Typ. Max.
P OUT
f
=
1.65 GHz
P IN
=
0.8 W
V CE
=
28 V
10
—
—
W
G P
f
=
1.65 GHz
P IN
=
0.8 W
V CE
=
28 V
11
—
—
dB
h c
f
=
1.65 GHz
P IN
=
0.8 W
V CE
=
28 V
48
—
—
%
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
EFFICIENCY vs POWER INPUT
2/4
383843785.002.png
SD1897
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z IN
FREQ.
Z IN (
W
)
Z CL (
W
)
1600 MHz
22.0 + j 23.0
3.1 + j 4.0
TYPICAL COLLECTOR
LOAD IMPEDANCE
1650 MHz
28.0 + j 18.0
3.0 + j 2.0
Z CL
P OUT
=
10 W
V CE
=
28 V
P IN
=
0.8 W
TEST CIRCUIT
C1, C2 : 0.4 - 2.5pF Johanson Variable Capacitor
C3
: 100pF Chip Capacitor ATC
C4
: Suppression Filters CDI 9900381-6004
L1, L2 : 4 Turns, Choke #28 AWG .080” I.D.
10.2, Height .050”, 1 Oz. Cu.
All Dimensions in mm unless otherwise specified
=
3/4
Substrate: Er
383843785.003.png
SD1897
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0170
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
{
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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