STU36MB20.pdf

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N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STU36NB20
N-CHANNEL ENHANCEMENT MODE
PowerMESH
]
MOSFET
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
I D
STU36NB20
200 V
< 0.065
W
36 A
n
TYPICAL R DS(on) = 0.052 W
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
VERY LOW INTRINSIC CAPACITANCES
n
GATE CHARGE MINIMIZED
n
n
± 30V GATE TO SOURCE VOLTAGE RATING
1 2 3
DESCRIPTION
Using the latest high voltage MESH OVERLAY ]
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R DS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
n
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DS
Drain-source Voltage (V GS =0)
200
V
V DGR
Drain- gate Voltage (R GS =20k
W
)
200
V
V GS
Gate-source Voltage
±
30
V
I D
Drain Current (continuous) at T c =25 o C
36
A
I D
Drain Current (continuous) at T c =100 o C
23
A
I DM (
•
) Drain Current (pulsed)
144
A
P tot
Total Dissipation at T c =25 o C
160
W
Derating Factor
1.28
W/ o C
dv/dt( 1 ) Peak Diode Recovery voltage slope
5.5
V/ns
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
(
•
) Pulse width limited by safe operating area
( 1 )I SD 3
36A, di/dt
3
200 A/
m
s, V DD 3
V (BR)DSS ,Tj
3
T JMAX
January 1998
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
383844147.002.png
STU36NB20
THERMAL DATA
R thj-case
Rthj -amb
R thc-sink
T l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
o C/W
oC/W
o C/W
o C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
36
A
d
<1%)
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =50V)
450
mJ
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D =250
m
AV GS =0
200
V
@100 o C
I DSS
Zero Gate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS =MaxRating
1
10
m
A
T c =125 o C
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
30 V
±
100
nA
ON ( * )
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V GS(th) Gate Threshold
Voltage
V DS =V GS I D =250
m
A
3
4
5
V
R DS(on) Static Drain-source On
Resistance
V GS =10V I D =18 A
0.052 0.065
W
I D(o n)
On State Drain Current V DS >I D(on) xR DS(on)max
V GS =10V
36
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
g fs (
*
)
r rd
Transconductance
V DS >I D(on) xR DS(on)max I D =18 A
10
19
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V f=1MHz V GS = 0
2800
750
100
3800
1000
140
pF
pF
pF
2/6
383844147.003.png
STU36NB20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t d(on)
t r
Turn-on Time
Rise Time
V DD =100V I D =18A
R G =4.7
W
V GS =10V
35
40
47
55
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD =160V I D =36 A V GS =10V
70
22
35
95
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t r(Voff)
t f
t c
Off-voltage Rise Time
Fall Time
Cross-over Time
V DD =160V I D =36A
R G =4.7
W
V GS =10V
18
22
42
24
30
57
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I SD
I SDM (
•
)
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
V SD (
*
) Forward On Voltage
I SD =36A V GS =0
1.5
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 36 A di/dt = 100 A/
m
s
350
ns
V DD =50V T j =150 o C
Q rr
2.3
m
C
I RRM
13
A
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
3/6
383844147.004.png
STU36NB20
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
383844147.005.png
STU36NB20
Max220 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.2
2.4
0.087
0.094
A2
2.9
3.1
0.114
0.122
b
0.7
0.93
0.027
0.036
b1
1.25
1.4
0.049
0.055
b2
1.2
1.38
0.047
0.054
c
0.45
0.6
0.18
0.023
D
15.9
16.3
0.626
0.641
D1
9
9.35
0.354
0.368
D2
0.8
1.2
0.031
0.047
D3
2.8
3.2
0.110
0.126
e
2.44
2.64
0.096
0.104
E
10.05
10.35
0.396
0.407
L
13.2
13.6
0.520
0.535
L1
3
3.4
0.118
0.133
D3
D2
D1
D
E
L1
L
P011R
5/6
383844147.001.png

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