PMST5401.pdf

(56 KB) Pobierz
383845988 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST5401
PNP high-voltage transistor
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 29
383845988.051.png 383845988.053.png 383845988.054.png 383845988.055.png 383845988.001.png 383845988.002.png 383845988.003.png 383845988.004.png 383845988.005.png 383845988.006.png 383845988.007.png 383845988.008.png 383845988.009.png 383845988.010.png 383845988.011.png 383845988.012.png
Philips Semiconductors
Product specification
PNP high-voltage transistor
PMST5401
FEATURES
PINNING
·
Low current (max. 300 mA)
PIN
DESCRIPTION
·
High voltage (max. 150 V).
1
base
2
emitter
APPLICATIONS
3
collector
·
General purpose
·
Telephony.
DESCRIPTION
handbook, halfpage
3
PNP high-voltage transistor in a SOT323 plastic package.
NPN complements: PMST5550 and PMST5551.
3
1
MARKING
2
TYPE NUMBER
MARKING CODE (1)
1
2
PMST5401
*
2L
Top view
MAM048
Note
1.
*
= - : Made in Hong Kong.
Fig.1 Simplified outline (SOT323) and symbol.
*
= t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
-
160
V
V CEO
collector-emitter voltage
open base
-
-
150
V
V EBO
emitter-base voltage
open collector
-
-
5
V
I C
collector current (DC)
-
- 300
mA
I CM
peak collector current
-
-
600
mA
I BM
peak base current
-
-
100
mA
P tot
total power dissipation
T amb £
25
°
C; note 1
-
200
mW
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 29
2
383845988.013.png 383845988.014.png 383845988.015.png 383845988.016.png 383845988.017.png 383845988.018.png 383845988.019.png 383845988.020.png 383845988.021.png 383845988.022.png 383845988.023.png 383845988.024.png 383845988.025.png 383845988.026.png 383845988.027.png 383845988.028.png 383845988.029.png
Philips Semiconductors
Product specification
PNP high-voltage transistor
PMST5401
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T amb =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
120 V
-
-
50
nA
I E = 0; V CB =
-
120 V; T j = 150
°
C
-
-
50
m
A
I EBO
emitter cut-off current
I C = 0; V EB =
-
4V
-
-
50
nA
h FE
DC current gain
V CE = - 5 V; (see Fig.2)
I C =
-
1mA
50
-
I C =
-
10 mA
60
240
I C =
-
50 mA; note 1
50
-
V CEsat
collector-emitter saturation voltage I C = - 10 mA; I B = - 1mA
-
- 200
mV
I C =
-
50 mA; I B =
-
5 mA; note 1
-
-
500
mV
V BEsat
base-emitter saturation voltage
I C =
-
10 mA; I B =
-
1mA
-
-
1
V
I C =
-
50 mA; I B =
-
5mA
-
-
1
V
C c
collector capacitance
I E =i e = 0; V CB = - 10 V; f = 1 MHz
-
6
pF
f T
transition frequency
I C =
-
10 mA; V CE =
-
10 V; f = 100 MHz 100
300
MHz
F
noise figure
I C =
-
200
m
A; V CE =
-
5 V; R S =2k
W
-
8
dB
f = 10 Hz to 15.7 kHz
Note
1. Pulse test: t p £
300
m
s;
d£
0.02.
1999 Apr 29
3
°
383845988.030.png 383845988.031.png
Philips Semiconductors
Product specification
PNP high-voltage transistor
PMST5401
MGD813
200
handbook, full pagewidth
h FE
150
V CE =
-
5 V
100
50
0
10 - 1
-
1
-
10
-
10 2
-
10 3
I C mA
Fig.2 DC current gain; typical values.
1999 Apr 29
4
-
383845988.032.png 383845988.033.png 383845988.034.png 383845988.035.png 383845988.036.png 383845988.037.png 383845988.038.png 383845988.039.png 383845988.040.png 383845988.041.png 383845988.042.png 383845988.043.png 383845988.044.png 383845988.045.png 383845988.046.png 383845988.047.png 383845988.048.png
Philips Semiconductors
Product specification
PNP high-voltage transistor
PMST5401
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max
b p
c
D E
e
e 1
E
L p
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT323
SC-70
97-02-28
1999 Apr 29
5
383845988.049.png 383845988.050.png 383845988.052.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin