2SC5098.pdf

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2SC5098
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5098
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.8dB, |S 21e | 2 = 10dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
20
V
Collector-emitter voltage
V CEO
10
V
Emitter-base voltage
V EBO
1.5
V
Base current
I B
7
mA
Collector current
I C
15
mA
Collector power dissipation
P C
100
mW
Junction temperature
T j
125
°C
Storage temperature range
T stg
− 55~125
°C
JEDEC ―
JEITA
―
TOSHIBA
2-2K1A
Microwave Characteristics (Ta = 25°C)
Weight: 0.006 g (typ.)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
f T
V CE = 6 V, I C = 7 mA
7
10
GHz
Insertion gain
S 21e 2 (1) V CE = 6 V, I C = 7 mA, f = 1 GHz
12.5 15.5
dB
S 21e 2 (2) V CE = 6 V, I C = 7 mA, f = 2 GHz
7
10
NF (1)
V CE = 6 V, I C = 3 mA, f = 1 GHz
1.3
2.5
Noise figure
dB
NF (2)
V CE = 6 V, I C = 3 mA, f = 2 GHz
1.8
3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
V CB = 10 V, I E = 0
1 µ A
Emitter cut-off current
I EBO
EB = 1 V, I C = 0
1 µ A
DC current gain
h FE
(Note 1)
V CE = 6 V, I C = 7 mA
50
160
Output capacitance
C ob
0.5
0.9
pF
V CB = 10 V, I E = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance
C re
0.34 0.75
pF
Note 1: h FE classification R: 50~100, O: 80~160
Note 2: C re is measured by 3 terminal method with capacitance bridge.
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Marking
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S-Parameter Z O = 50 Ω , Ta = 25°C
V CE = 5 V, I C = 5 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.870
− 27.8
8.387
159.6
0.041
76.0
0.962
− 20.1
400
0.791
− 54.0
7.700
141.8
0.074
63.5
0.876
− 38.7
600
0.692
− 77.8
6.701
125.7
0.097
54.2
0.774
− 54.4
800
0.599
− 99.2
5.798
112.6
0.113
47.9
0.677
− 67.7
1000
0.518
− 118.1
4.928
102.0
0.122
43.8
0.596
− 78.6
1200
0.462
− 135.9
4.239
93.5
0.129
40.7
0.524
− 87.8
1400
0.406
− 151.0
3.692
86.5
0.132
39.7
0.463
− 95.9
1600
0.376
− 166.0
3.256
80.5
0.137
39.6
0.420
− 102.4
1800
0.334
179.9
2.897
75.9
0.143
39.9
0.382
− 107.7
2000
0.305
166.3
2.623
71.3
0.147
40.7
0.350
− 111.0
V CE = 5 V, I C = 10 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.737
− 42.4
14.597
150.5
0.037
70.4
0.900
− 28.4
400
0.625
− 77.4
11.757
128.3
0.060
58.8
0.735
− 50.2
600
0.521
− 105.4
9.204
112.6
0.074
52.5
0.600
− 65.3
800
0.455
− 128.8
7.420
101.5
0.085
50.0
0.503
− 77.3
1000
0.412
− 147.7
6.078
92.9
0.093
49.5
0.433
− 86.9
1200
0.388
− 165.4
5.105
86.1
0.100
49.3
0.376
− 95.4
1400
0.370
179.0
4.377
80.9
0.108
50.4
0.330
− 102.8
1600
0.360
165.6
3.855
76.2
0.116
51.4
0.295
− 108.7
1800
0.348
151.3
3.441
72.3
0.126
52.3
0.265
− 113.4
2000
0.333
137.7
3.114
68.4
0.135
53.2
0.238
− 115.5
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