2SC2982.pdf
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2SC2982
2SC2982
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications
Medium Power Amplifier Applications
Unit: mm
• High DC current gain and excellent linearity
: h
FE (1)
= 140 to 600 (V
CE
= 1 V, I
C
= 0.5 A)
: h
FE (2)
= 70 (min), 140 (typ.), (V
CE
= 1 V, I
C
= 2 A)
• Low saturation voltage
: V
CE (sat)
= 0.5 V (max) (I
C
= 2 A, I
B
= 50 mA)
• Small flat package
• P
C
= 1.0 to 2.0 W (mounted on ceramic substrate)
• Complementary to 2SA1314
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
30
V
Collector-emitter voltage
V
CES
30
V
JEDEC ―
V
CEO
10
Emitter-base voltage
V
EBO
6
V
JEITA
SC-62
Collector current
DC
I
C
2
A
TOSHIBA
2-5K1A
Pulse (Note 1)
I
CP
4
Weight: 0.05 g (typ.)
DC
I
B
0.4
Base current
A
Pulse (Note 1)
I
BP
0.8
P
C
500
Collector power dissipation
P
C
(Note 2)
1000
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
−55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: 2SC2982 mounted on ceramic substrate (250 mm
2
× 0.8 t)
1
2002-08-13
2SC2982
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 30 V, I
E
= 0
―
―
0.1
µA
Emitter cut-off current
I
EBO
V
EB
= 6 V, I
C
= 0
―
―
0.1
µA
Collector-emitter breakdown voltage
V
(BR) CEO
C
= 10 mA, I
B
= 0
10 ― ―
V
Emitter-base breakdown voltage
V
(BR) EBO
E
= 1 mA, I
C
= 0
6 ― ―
V
DC current gain
h
FE (1)
(Note 3)
V
CE
= 1 V, I
C
= 0.5 A
140 ―
600
―
h
FE (2)
V
CE
= 1 V, I
C
= 2 A
70
140
―
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 2 A, I
B
= 50 mA
―
0.2
0.5
V
Base-emitter voltage
V
BE
V
CE
= 1 V, I
C
= 2 A
―
0.86
1.5
V
Transition frequency
f
T
V
CE
= 1 V, I
C
= 0.5 A
―
150 ―
MHz
Collector output capacitance
C
ob
CB
= 10 V, I
E
= 0, f = 1 MHz ―
27
―
pF
Note 3: h
FE (1)
classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
Marking
Type name
h
FE
classifi
c
ation
S A
2
2002-08-13
2SC2982
I
C
– V
CE
h
FE
– I
C
4.0
1000
60
25
Common emitter
Ta
=
25°C
500
Ta
=
100°C
15
25
3.0
300
−
25
10
2.0
100
IB
=
5 m
A
50
1.0
30
0
Common emitter
V
CE
=
1 V
0
10
0
1.0
2.0
3.0
4.0
0.01
0.03
0.1
0.3
1
3
10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE (sat)
– I
C
I
C
– V
BE
1
4.0
0.5
Common emitter
IC/IB
=
40
Common emitter
V
CE
=
1 V
3.2
0.3
2.4
0.1
Ta
=
100°C
25
−
25
1.6
0.05
Ta
=
100°
C
0.03
−
25
25
0.8
0.01
0.03
0.1
0.3
1
3
10
0
0
0.4
0.8
1.2
1.6
2.0
Collector current I
C
(A)
Base-emitter voltage V
BE
(V)
Safe Operating Area
P
C
– Ta
10
5
I
C
max (pulse)
*
1.4
(1) Mounted on ceramic substrate
(250 mm
2
×
0.8 t)
(2) No heat sink
3
I
C
max (continuous)
100 ms
*
10 ms
*
1.2
(1)
1
DC operation
Ta
=
25°C
1.0
0.5
0.3
0.8
0.6
(2)
0.1
*
: Single nonrepetitive pulse
Ta
=
25°C
Curves must be derated
linearly with increase in
temperature.
Tested without a substrate.
0.4
0.2
V
CEO
max
0.01
0.3
1
3
10
30
100
0
0
20
40
60
80
100 120 140 160
Collector-emitter voltage V
CE
(V)
Ambient temperature Ta (°C)
3
2002-08-13
0.01
0.1
2SC2982
RESTRICTIONS ON PRODUCT USE
000707EAA
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
•
The information contained herein is subject to change without notice.
4
2002-08-13
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