2SC1923.pdf

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2SC1923
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC1923
High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications
Unit: mm
• Small reverse transfer capacitance: C re = 0.7 pF (typ.)
• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
40
V
Collector-emitter voltage
V CEO
30
V
Emitter-base voltage
V EBO
4
V
Collector current
I C
20
mA
Base current
I B
4
mA
Collector power dissipation
P C
100
mW
Junction temperature
T j
125
°C
Storage temperature range
T stg
− 55~125
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
V CB = 18 V, I E = 0
0.5 µ A
Emitter cut-off current
I EBO
V EB = 4 V, I C = 0
0.5 µ A
DC current gain
h FE
(Note)
V CE = 6 V, I C = 1 mA
40
200
Reverse transfer capacitance
C re
V CE = 6 V, f = 1 MHz
0.70
pF
Transition frequency
f T
V CE = 6 V, I C = 1 mA
550
MHz
Collector-base time constant
C c ･ r bb’
V CE = 6 V, I E = − 1 mA, f = 30 MHz
30
ps
Noise figure
NF
V CE = 6 V, I E = − 1 mA, f = 100 MHz,
Figure 1
2.5
4.0 *
dB
Power gain
G pe
15
18
dB
Note: h FE classification R: 40~80, O: 70~140, Y: 100~200 ( * NF = 5.0dB max)
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2SC1923
L 1 : 0.8 mm φ silver plated copper wire, 4 T, 10ID, 8 LENGTH
Figure 1 NF, G pe Test Circuit
y Parameter (typ.)
(1) Common emitter (V CE = 6 V, I E = −1 mA, f = 100 MHz)
Characteristics
Symbol
Typ.
Unit
Input conductance
g ie
2.9
mS
Input capacitance
C ie
10.2
pF
Reverse transfer admittance
y re
0.33 µ S
Phase angle of reverse transfer
admittance
θ re
− 90
°
Forward transfer admittance
|y fe |
40
mS
Phase angle of forward transfer
admittance
θ fe
− 20
°
Output conductance
g oe
45 µ S
Output capacitance
C oe
1.1
pF
(2) Common base (V CE = 6 V, I E = −1 mA, f = 100 MHz)
Characteristics
Symbol
Typ.
Unit
Input conductance
g ib
34
mS
Input capacitance
C ib
− 10
pF
Reverse transfer admittance
y rb
0.27 µ S
Phase angle of reverse transfer
admittance
θ rb
− 105
°
Forward transfer admittance
|y fb |
34
mS
Phase angle of forward transfer
admittance
θ fb
165
°
Output conductance
g ob
45 µ S
Output capacitance
C ob
1.1
pF
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