BYT51.pdf

VISHAY

BYT51.

Vishay Semiconductors

Standard Avalanche Sinterglass Diode

Features

• Glass passivated junction

• Hermetically sealed package

• Low reverse current

Applications

Rectification diode

Mechanical Data

Case: SOD-57 Sintered glass case

949539

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: approx. 369 mg

Parts Table

Part

Type differentiation

Package

BYT51A

V R = 50 V; I FAV = 1.5 A

SOD-57

BYT51B

V R = 100 V; I FAV = 1.5 A

SOD-57

BYT51D

V R = 200 V; I FAV = 1.5 A

SOD-57

BYT51G

V R = 400 V; I FAV = 1.5 A

SOD-57

BYT51J

V R = 600 V; I FAV = 1.5 A

SOD-57

BYT51K

V R = 800 V; I FAV = 1.5 A

SOD-57

BYT51M

V R = 1000 V; I FAV = 1.5 A

SOD-57

Absolute Maximum Ratings

T amb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Value

Unit

Reverse voltage = Repetitive

peak reverse voltage

see electrical characteristics

BYT51A

V R = V RRM

BYT51B

V R = V RRM

100

BYT51D

V R = V RRM

200

BYT51G

V R = V RRM

400

BYT51J

V R = V RRM

600

BYT51K

V R = V RRM

800

BYT51M

V R = V RRM

1000

Peak forward surge current

t p = 10 ms, half sinewave

I FSM

Repetitive peak forward current

I FRM

Document Number 86028

Rev. 1.7, 12-Aug-04

www.vishay.com

BYT51.

Vishay Semiconductors

VISHAY

Parameter

Test condition

Part

Symbol

Value

Unit

Average forward current

on PC board

I FAV

l = 10 mm

I FAV

1.5

Junction and storage

temperature range

T j = T stg

- 55 to + 175

°C

Non repetitive reverse

avalanche energy

I (BR)R = 1 A

E R

Maximum Thermal Resistance

T amb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

l = 10 mm, T L = constant

R thJA

K/W

on PC board with spacing

25 mm

R thJA

100

K/W

Electrical Characteristics

T amb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Ty p.

Max

Unit

Forward voltage

I F = 1 A

V F

0.95

1.1

I F = 1 A, T j = 175 °C

V F

1.0

Reverse current

V R = V RRM

I R

V R = V RRM , T j = 150 °C

I R

100

µ A

Reverse recovery time

I F = 0.5 A, I R = 1 A, i R = 0.25 A

t rr

Typical Characteristics (T amb = 25 ° C unless otherwise specified)

120

100

T L = constant

T j = 175

0.1

T j =25 ° C

0.01

0.001

5 10 15

25 30

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V F – Forward Voltage(V)

94 9101

l - Lead Length ( mm )

16323

Figure 1. Typ. Thermal Resistance vs. Lead Length

Figure 2. Forward Current vs. Forward Voltage

www.vishay.com

Document Number 86028

Rev. 1.7, 12-Aug-04

VISHAY

BYT51.

Vishay Semiconductors

1.6

350

R thJA =45K/W

l=10mm

V R =V RRM

1.4

300

1.2

250

1.0

200

P R -Limit

@100 % V R

0.8

150

0.6

R thJA =100 K/W

PCB: d = 25 mm

P R -Limit

@80%V R

0.4

100

0.2

0.0

0 20 40 60 80 100 120 140 160 180

T amb – Ambient Temperature ( ° C)

25 50 75 100 125 150 175

16324

16326

T j - Junction Temperature ( ° C)

Figure 3. Max. Average Forward Current vs. Ambient Temperature

Figure 5. Max. Reverse Power Dissipation vs. Junction

Temperature

1000

V R =V RRM

f=1MHz

100

25 50 75 100 125 150 175

T j – Junction Temperature ( ° C)

0.1

100

16325

16327

V R - Reverse Voltage(V)

Figure 4. Reverse Current vs. Junction Temperature

Figure 6. Diode Capacitance vs. Reverse Voltage

Package Dimensions in mm (Inches)

Sintered Glass Case

SOD-57

Cathode Identification

3.6 (0.140)max.

94 9538

ISO Method E

0.82 (0.032) max.

26(1.014) min.

4.0 (0.156) max.

26(1.014) min.

Document Number 86028

Rev. 1.7, 12-Aug-04

www.vishay.com

BYT51.

Vishay Semiconductors

VISHAY

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com

Document Number 86028

Rev. 1.7, 12-Aug-04

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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