TPC8001.pdf

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TPC8001
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
TPC8001
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
Small footprint due to small and thin package
: R DS (ON) = 15 mΩ (typ.)
Low leakage current : I DSS = 10 µA (max) (V DS = 30 V)
Enhancement−mode : V th = 0.8~2.0 V (V DS = 10 V, I D = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V DSS
30
V
Drain-gate voltage (R GS = 20 kΩ)
V DGR
30
V
Gate-source voltage
V GSS
±20
V
JEDEC ―
DC
(Note 1)
I D
7
Drain current
A
Pulse (Note1)
I DP
28
JEITA
―
Drain power dissipation
(t = 10 s)
P D
2.4
W
(Note 2a)
TOSHIBA
2-6J1B
Drain power dissipation
(t = 10 s)
P D
1.0
W
Weight: 0.080 g (typ.)
(Note 2b)
Single pulse avalanche energy
E AS
64
mJ
(Note 3)
Avalanche current
I AR
7
A
Circuit Configuration
Repetitive avalanche energy
E AR
0.24
mJ
(Note 2a) (Note 4)
Channel temperature
T ch
150
°C
Storage temperature range
T stg −55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2003-02-20
Low drain−source ON resistance
High forward transfer admittance : |Y fs | = 11 S (typ.)
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TPC8001
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
R th (ch-a)
52.1
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
R th (ch-a)
125
°C/W
Marking (Note 5)
TPC8001
Type
※
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(unit: mm)
(a)
(b)
Note 3: V DD = 24 V, T ch = 25°C (initial), L = 1.0 mH, R G = 25 Ω, I AR = 7 A
Note 4: Reptitve rating; pulse width limited by maximum channel temperature
Note 5: ●
on lower left of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
2
2003-02-20
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TPC8001
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I GSS
V GS = ±16 V , V DS = 0 V
— ―
±10
µA
Drain cut−off current
I DSS
V DS = 30 V , V GS = 0 V
― ―
10
µA
Drain−source breakdown voltage V (BR) DSS I D = 10 mA , V GS = 0 V
30 ― ―
V
Gate threshold voltage
V th
V DS = 10 V, I D = 1 mA
0.8 ―
2.0
V
R DS (ON) V GS = 4 V, I D = 3.5 A
―
25
30
mΩ
Drain−source ON resistance
R DS (ON) V GS = 10 V, I D = 3.5 A
―
16
20
mΩ
Forward transfer admittance
|Y fs |
V DS = 10 V, I D = 3.5 A
5.5
11 ―
S
Input capacitance
C iss
―
1250 ―
Reverse transfer capacitance
C rss
V DS = 10 V, V GS = 0 V, f = 1 MHz
―
190 ―
pF
Output capacitan ce
C oss
―
760 ―
Rise time
tr
―
9 ―
Turn−on time
t on
―
17 ―
Switching time
ns
Fall time
t f
―
24 ―
Turn−off time
t off
―
100 ―
Total gate charge (Gate−source
plus gate−drain)
Q g
―
40 ―
Gate−source charge
Q gs
V DD ≈ 24 V, V GS = 10 V, I D = 7 A
―
27 ―
nC
Gate−drain (“miller”) charge
Q gd
―
13 ―
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I DRP
—
—
—
28
A
Forward voltage (diode)
V DSF
I DR = 7 A, V GS = 0 V
—
— −1.2
V
3
2003-02-20
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TPC8001
4
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TPC8001
5
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