FS3KM.pdf

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MITSUBISHI Nch POWER MOSFET
FS3KM-10
HIGH-SPEED SWITCHING USE
FS3KM-10
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
f
3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
123
w
q GATE
w DRAIN
e SOURCE
q
Á V DSS ................................................................................ 500V
Á r DS (ON) (MAX) ................................................................. 4.4
W
Á I D ............................................................................................ 3A
Á V iso ................................................................................ 2000V
e
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25 ° C)
Symbol
Parameter
Conditions
Ratings
Unit
V DSS
V GSS
I D
I DM
P D
T ch
T stg
V iso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V GS = 0V
V DS = 0V
500
±
V
V
A
A
W
°
30
3
9
30
–55 ~ +150
–55 ~ +150
2000
2.0
C
C
V rms
g
°
AC for 1minute, Terminal to case
Typical value
Feb.1999
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MITSUBISHI Nch POWER MOSFET
FS3KM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25 ° C)
Limits
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
Max.
V (BR) DSS
V (BR) GSS
I GSS
I DSS
V GS (th)
r DS (ON)
V DS (ON)
½
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
I D = 1mA, V GS = 0V
I G =
500
±
—
—
—
—
3
3.4
3.4
1.5
300
35
6
13
10
30
30
1.5
—
—
—
±
V
V
m
±
100
m
A, V DS = 0V
30
—
—
2
—
—
1.0
—
—
—
—
—
—
—
—
—
V GS =
25V, V DS = 0V
V DS = 500V, V GS = 0V
I D = 1mA, V DS = 10V
I D = 1A, V GS = 10V
I D = 1A, V GS = 10V
I D = 1A, V DS = 10V
±
10
1
4
4.4
4.4
—
—
—
—
—
—
—
—
2.0
4.17
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
y fs
½
C iss
C oss
C rss
t d (on)
t r
t d (off)
t f
V SD
R th (ch-c)
V DS = 25V, V GS = 0V, f = 1MHz
V DD = 200V, I D = 1A, V GS = 10V, R GEN = R GS = 50
W
I S = 1A, V GS = 0V
Channel to case
°
C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
10 1
7
5
3
2
10 0
7
5
3
2
10 –1
5
3
2
10 –2
50
tw=10µs
40
100µs
30
1ms
10ms
20
DC
T C = 25°C
Single Pulse
10
0
0
50
100
150
200
23 5710 1
23 5710 2
23 5710 3
2
CASE TEMPERATURE T C (°C)
DRAIN-SOURCE VOLTAGE V DS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
5
T C = 25°C
Pulse Test
P D = 30W
P D = 30W
V GS = 20V
10V
8V
8
4
V GS = 20V
10V
8V
T C = 25°C
Pulse Test
6V
6
3
4
2
6V
5V
2
1
5V
0 0
0 0
10
20
30
40
50
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V DS (V)
DRAIN-SOURCE VOLTAGE V DS (V)
Feb.1999
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MITSUBISHI Nch POWER MOSFET
FS3KM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
10
T C = 25°C
Pulse Test
T C = 25°C
Pulse Test
V GS = 10V
32
8
24
6
I D = 4A
20V
16
4
3A
2A
1A
8
2
0
0 0
4
8
12
16
20
10 –2
23
5710 –1 23 5710 0
23 5710 1
GATE-SOURCE VOLTAGE V GS (V)
DRAIN CURRENT I D (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
10 1
7
5
V DS = 10V
Pulse Test
T C = 25°C
V DS = 50V
Pulse Test
8
3
2
T C = 25°C
6
10 0
7
5
75°C
4
125°C
3
2
2
0 0
10 –1
10 –1
4
8
12
16
20
23
5710 0
23
5710 1
GATE-SOURCE VOLTAGE V GS (V)
DRAIN CURRENT I D (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
7
5
3
2
5
Tch = 25°C
V DD = 200V
V GS = 10V
R GEN = R GS = 50 W
Ciss
3
2
t f
10 2
10 2
7
5
7
5
3
2
t d(off)
Coss
3
2
10 1
t d(on)
7
5
3
2
Tch = 25°C
f = 1MHz
V GS = 0V
Crss
10 1
7
5
t r
23 5710 0
23 5710 1
23 5710 2
2
10 –1
23
5710 0
23
5710 1
DRAIN-SOURCE VOLTAGE V DS (V)
DRAIN CURRENT I D (A)
Feb.1999
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MITSUBISHI Nch POWER MOSFET
FS3KM-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
10
T C = 125°C
Tch = 25°C
I D = 3A
VGS = 0V
Pulse Test
16
8
V DS = 100V
25°C
200V
12
6
400V
75°C
8
4
4
2
0 0
0 0
4
8
12
16
20
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q g (nC)
SOURCE-DRAIN VOLTAGE V SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10 1
7
5
5.0
V DS = 10V
I D = 1mA
V GS = 10V
I D = 1/2I D
Pulse Test
4.0
3
2
3.0
10 0
7
5
2.0
3
2
1.0
10 –1
0
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
10 1
7
5
3
2
10 0
7
5
3
2
10 –1
7
5
3
2
V GS = 0V
I D = 1mA
D=1
0.5
0.2
0.1
1.2
1.0
0.05
0.02
0.01
Single Pulse
P DM
0.8
tw
T
0.6
tw
D= T
0.4
10 –2
–50
0
50
100
150
10 –4
23 57
10 –3
23 57
10 –2
23 57
10 –1
23 5710 0 23 5710 1 23 5710 2
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH t w (s)
Feb.1999
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