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IRF9540, RF1S9540SM
Data Sheet
July 1999
File Number
2282.6
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Features
• 19A, 100V
•r DS(ON) = 0.200 W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly Developmental Type TA17521.
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
D
IRF9540
TO-220AB
IRF9540
RF1S9540SM
TO-263AB
RF1S9540
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
S
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
4-15
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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IRF9540, RF1S9540SM
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
IRF9540,
RF1S9540SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DS
-100
V
Drain to Gate Voltage (R GS = 20k W) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
T C = 100 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
-19
-12
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
-76
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
± 20
V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D
150
W
W/ o C
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AS
960
mJ
o C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
o o C
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25 o C to 150 o C.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV DSS
I D = -250 m A, V GS = 0V (Figure 10)
-100
-
-
V
Gate to Threshold Voltage
V GS(TH)
V GS = V DS , I D = -250
A
-2
-
-4
V
m
Zero Gate Voltage Drain Current
I DSS
V DS = Rated BV DSS , V GS = 0V
-
-
-25
m A
V DS = 0.8 x Rated BV DSS , V GS = 0V, T C = 125 o C
-
-
-250
A
m
On-State Drain Current (Note 2)
I D(ON)
V DS > I D(ON) x r DS(ON) MAX , V GS = -10V
-19
-
-
A
Gate to Source Leakage Current
I GSS
V GS =
20V
-
-
100
nA
±
±
Drain to Source On Resistance (Note 2)
r DS(ON)
I D = -10A, V GS = -10V (Figures 8, 9)
-
0.150
0.200
W
Forward Transconductance (Note 2)
g fs
V DS > I D(ON) x r DS(ON) MAX , I D = -6A
(Figure 12)
5
7
-
S
Turn-On Delay Time
t d(ON)
V DD = -50V, I D » 19A, R G = 9.1 W, R L = 2.3 W,
V GS = -10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
16
20
ns
Rise Time
t r
-
65
100
ns
Turn-Off Delay Time
t d(OFF)
-
47
70
ns
Fall Time
t f
-
28
70
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q g(TOT)
V GS = -10V, I D = -19A, V DS = 0.8 x Rated BV DSS ,
I g(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
70
90
nC
Gate to Source Charge
Q gs
-
14
-
nC
Gate to Drain “Miller” Charge
Q gd
-
56
-
nC
Input Capacitance
C ISS
V DS = -25V, V GS = 0V, f = 1MHz
(Figure 11)
-
1100
-
pF
Output Capacitance
C OSS
-
550
-
pF
Reverse Transfer Capacitance
C RSS
-
250
-
pF
Internal Drain Inductance
L D
Measured From the
Contact Screw on Tab to
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to the Center of
Die
-
4.5
-
nH
D
L D
Internal Source Inductance
L S
Measured From the
Source Lead, 6mm
(0.25in) From Package to
Source Bonding Pad
-
7.5
-
nH
G
L S
S
o C/W
Thermal Resistance Junction to Case
R
-
-
1
q
JC
o C/W
Thermal Resistance Junction to Ambient
R
Typical Socket Mount
-
-
62.5
q JA
4-16
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IRF9540, RF1S9540SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I SD
Modified MOSFET Symbol
Showing the Integral Re-
verse
P-N Junction Diode
-
-
-19
A
D
Pulse Source to Drain Current
(Note 3)
I SDM
-
-
-76
A
G
S
T C = 25 o C, I SD = -19A, V GS = 0V (Figure 13)
Source to Drain Diode Voltage (Note 2)
V SD
-
-
-1.5
V
T J = 150 o C, I SD = 19A, dI SD /dt = 100A/ m s
Reverse Recovery Time
t rr
-
170
-
ns
T J = 150 o C, I SD = 19A, dI SD /dt = 100A/ m s
Reverse Recovery Charge
Q RR
-
0.8
-
m C
NOTES:
2. Pulse test: pulse width £ 300 m s, duty cycle £ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V DD = 25V, starting T J = 25 o C, L = 4mH, R G = 25 W , peak I AS = 19A. (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
-20
1.2
1.0
-20
0.8
-15
0.6
-10
0.4
-5
0.2
0
25
0
75
125
175
0
25
50
75
100
125
175
150
T C , CASE TEMPERATURE ( o C)
T C , CASE TEMPERATURE ( o C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
P DM
0.1
0.1
0.05
t 1
0.02
t 2
0.01
NOTES:
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x R
SINGLE PULSE
JC + T C
q
0.01
10 -5
10 -4
10 -3
10 -2
10 -1
1
10
t 1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-17
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IRF9540, RF1S9540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
200
-100
V GS = -16V
V GS = -14V
100
-80
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
10
s
100 m s
1ms
m
-60
V GS = -12V
10
10ms
100ms
DC
V GS = -10V
OPERATION IN THIS
-40
AREA IS LIMITED
V GS = -9V
1
BY r DS(ON)
V GS = -8V
-20
V GS = -7V
V GS = -6V
T C = 25 o C
T J = MAX RATED
V GS = -5V
SINGLE PULSE
V GS = -4V
0
0.1
0
-10
-20
-30
-40
-50
1
10
100
500
V DS , DRAIN TO SOURCE VOLTAGE (V)
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
-50
-100
V GS = -16V
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
V GS = -12V
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
V GS = -14V
-40
V GS = -10V
V GS = -9V
-10
-30
V GS = -8V
T J = 125 o C
-20
V GS = -7V
-1
T J = 25 o C
-10
V GS = -6V
T J = -55 o C
V GS = -5V
V GS = -4V
0
-0.1
0
-2
-4
-6
-8
-10
0
-2
-4
-6
-8
-10
-12
-14
V DS , DRAIN TO SOURCE VOLTAGE (V)
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
0.26
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
2.0
V GS = -10V, I D = 10A
V GS = -10V
0.22
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
m
1.5
0.18
V GS = -20V
1.0
0.14
0.5
0.10
0.2
0
-20
-40
-60
-80
-100
-40
0
40
80
120
160
I D , DRAIN CURRENT (A)
T J , JUNCTION TEMPERATURE ( o C)
NOTE: Heating effect of 2
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
m
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-18
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IRF9540, RF1S9540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
2000
1.15
I D = 250
A
m
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
C RSS = C GD
C OSS » C DS + C GD
1600
1.05
C ISS
1200
0.95
800
C OSS
0.85
400
C RSS
0
0.75
-10
-30
-40
-50
0
-20
-40
0
40
80
120
160
V DS , DRAIN TO SOURCE VOLTAGE (V)
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
100
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
m
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
m
T J = 150 o C
12
T J = -55 o C
T J = 25 o C
10
9
T J = 25 o C
T J = 125 o C
6
1
3
0.1
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
-20
-40
I D , DRAIN CURRENT (A)
-60
-80
-100
V SD , SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
I D = -19A
- 5
V DS = -20V
V DS = -50V
V DS = -80V
-10
0
20
40
60
80
Q g(TOT) , GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-19
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