irf540.pdf

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IRF540
IRF540FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
V DSS
R DS(on)
I D
IRF540
IRF540FI
100 V
100 V
< 0.077
W
30 A
16 A
< 0.077
W
TYPICAL R DS(on) = 0.045
W
n
AVALANCHE RUGGED TECHNOLOGY
n
100% AVALANCHE TESTED
n
REPETITIVE AVALANCHE DATA AT 100 o C
n
LOW GATE CHARGE
3
3
n
2
2
HIGH CURRENT CAPABILITY
1
1
n
175 o C OPERATING TEMPERATURE
n
TO-220
ISOWATT220
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
n
REGULATORS
n
DC-DC & DC-AC CONVERTERS
n
MOTOR CONTROL, AUDIO AMPLIFIERS
n
INTERNAL SCHEMATIC DIAGRAM
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
n
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IRF540
IRF540FI
V DS
Drain-source Voltage (V GS =0)
100
V
V DG R
Drain- gate Voltage (R GS =20k
)
100
V
W
V GS
Gate-source Voltage
±
20
V
Drain Current (cont.) at T c =25 o C
I D
30
16
A
Drain Current (cont.) at T c =100 o C
I D
21
11
A
I DM (
•
)
Drain Current (pulsed)
120
120
A
Total Dissipation at T c =25 o C
P tot
150
45
W
W/ o C
Derating Factor
1
0.3
V ISO
Insulation Withstand Voltage (DC)
'
2000
V
o C
T stg
Storage Temperature
-65 to 175
o C
T j
Max. Operating Junction Temperature
175
(
•
) Pulse width limited by safe operating area
July 1993
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IRF540/FI
THERMAL DATA
TO-220
ISOWATT220
o C/W
R thj-case
Thermal
Resistance
Junction-case
Max
1
3.33
o
R thj-amb
R th c-s
T l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
C/W
o C/W
o C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max
Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
30
A
d
<1%)
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =25V)
200
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max,
50
mJ
d
<1%)
I AR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
21
A
o C, pulse width limited by T j max,
d
<1%)
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS
Drain-source
Breakdown Voltage
I D =250
m
A GS = 0
100
V
I DSS
Zero Gate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS = Max Rating x 0.8
250
1000
m
A
T c =125 o C
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
20 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th)
Gate Threshold Voltage V DS =V GS
I D =250
m
A
2
2.9
4
V
R DS(on)
Static Drain-source On
Resistance
V GS =10V
I D = 17 A
0.045
0.077
W
I D(on)
On State Drain Current
V DS >I D(on) xR DS(on)max
V GS =10V
30
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (
*
)
r rd
Transconductance
V DS >I D(on) xR DS(on)max
I D =17A
10
18
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V
f=1MHz
V GS = 0
1600
460
140
2100
600
200
pF
pF
pF
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IRF540/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
t r
t d(off)
t f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V DD =50V
I D =5A
55
110
290
125
80
160
410
180
ns
ns
ns
ns
R i =50
V GS =10V
(see test circuit)
W
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I D =30A V GS =10V
V DD = Max Rating x 0.8
(see test circuit)
55
11
26
80
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
I SD M (
Source-drain Current
Source-drain Current
(pulsed)
30
120
A
A
•
)
V SD (
*
)
Forward On Voltage
I SD =30A
V GS =0
1.6
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 30 A
di/dt = 100 A/
m
s
140
ns
T j =150 o CV DD =50V
Q rr
0.7
m
C
( * ) Pulsed: Pulse duration = 300 m s, duty cycle 1.5 %
( • ) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Package
Safe Operating Area for ISOWATT220 Package
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IRF540/FI
Thermal Impedance for TO-220 Package
Thermal Impedance for ISOWATT220 Package
Derating Curve for TO-220 Package
Derating Curve for ISOWATT220 Package
Output Characteristics
Transfer Characteristics
4/9
777332405.005.png
IRF540/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
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