6n80.pdf
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Pobierz
Standard
Power MOSFET
V
DSS
I
D25
R
DS(on)
IXTH/IXTM 6 N80
800 V
6 A
1.8
W
W W
IXTH/IXTM 6 N80A 800 V
6 A
1.4
W
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V
DSS
T
J
= 25
°
C to 150
°
C
800
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
W
800
V
V
GS
Continuous
±
20
V
D (TAB)
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
6
A
TO-204 AA (IXTM)
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
24
A
P
D
T
C
= 25
°
C
180
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
G
T
stg
-55 ... +150
°
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
300
°
C
1.6 mm (0.062 in.) from case for 10 s
Features
l
International standard packages
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Applications
typ.
max.
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
V
DSS
V
GS
= 0 V, I
D
= 3 mA
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
2
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J
= 25
°
C
250
m
A
Advantages
V
GS
= 0 V
T
J
= 125
°
C
1
mA
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
6N80
1.8
W
6N80A
1.4
W
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
91542E(5/96)
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXTH 6N80
IXTH 6N80A
IXTM 6N80
IXTM 6N80A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
TO-247 AD (IXTH) Outline
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
4
6
S
C
iss
2800
pF
1 2 3
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
250
pF
C
rss
100
pF
t
d(on)
35
100
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
40
110
ns
Terminals: 1 - Gate
2 - Drain
t
d(off)
R
G
= 2
W,
(External)
100
200
ns
3 - Source
Tab - Drain
t
f
60
100
ns
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Q
g(on)
110
130
nC
A
4.7
5.3
.185
.209
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
15
30
nC
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
Q
gd
50
70
nC
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
R
thJC
0.7
K/W
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
R
thCK
0.25
K/W
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Æ
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
Symbol
Test Conditions
min.
typ.
max.
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
I
S
V
GS
= 0 V
6
A
I
SM
Repetitive; pulse width limited by T
JM
24
A
TO-204AA (IXTM) Outline
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
m
s, V
R
= 100 V
900
ns
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
6.4
11.4
.250
.450
A1
3.42
.135
Æ
b
.97
1.09
.038
.043
Æ
D
22.22
.875
e
10.67
11.17
.420
.440
e1
5.21
5.71
.205
.225
L
7.93
.312
Æ
p
3.84
4.19
.151
.165
Æ
p1
3.84
4.19
.151
.165
q
30.15 BSC
1.187 BSC
R
13.33
.525
R1
4.77
.188
s
16.64
17.14
.655
.675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXTH 6N80
IXTH 6N80A
IXTM 6N80
IXTM 6N80A
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
9
9
7V
V
GS
= 10V
8
8
T
J
= 25°C
7
7
6
6
5
5
T
J
= 25°C
4
4
3
3
6V
2
2
1
1
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
5
10
15
20
25
30
V
GS
- Volts
V
DS
- Volts
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
3.0
2.50
T
J
= 25°C
2.25
2.8
2.00
2.6
1.75
2.4
1.50
I
D
= 2.5
A
V
GS
= 10V
1.25
2.2
1.00
V
GS
= 15V
2.0
0.75
1.8
0.50
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees C
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
1.2
7
BV
CES
V
GS(th)
6
1.1
6N80A
5
1.0
6N80
0.9
4
3
0.8
0.7
2
1
0.6
0
0.5
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees C
T
J
- Degrees C
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXTH 6N80
IXTH 6N80A
IXTM 6N80
IXTM 6N80A
Fig.7
Gate Charge Characteristic Curve
Fig.8
Forward Bias Safe Operating Area
10
10us
V
DS
= 500V
I
D
= 3.0A
I
G
= 10mA
9
8
10
100us
Limited by R
DS(on)
7
6
1ms
5
4
1
10 ms
3
100ms
2
1
0
0.1
0 0 0 0 0 0 0 0 0
1
10
100
100 0
Gate Charge - nCoulombs
V
DS
- Volts
Fig.9
Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
275 0
9
C
iss
250 0
8
225 0
7
200 0
6
f = 1 MHz
V
DS
= 25V
175 0
5
150 0
125 0
4
T
J
= 125°C
100 0
3
750
T
J
= 25°C
2
500
C
oss
1
250
C
rss
0
0
0
5
10
15
20
25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
- Volts
V
DS
- Volts
Fig.11 Transient Thermal Impedance
1
D=
0.5
D=
0.2
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
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