BF871.pdf

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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF869; BF871
NPN high-voltage transistors
1999 Apr 12
Product specification
Supersedes data of 1996 Dec 09
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Philips Semiconductors
Product specification
NPN high-voltage transistors
BF869; BF871
FEATURES
·
Low feedback capacitance.
handbook, halfpage
APPLICATIONS
·
For use in class-B video output stages in colour
television receivers.
2
DESCRIPTION
3
NPN transistors in a TO-202 plastic package.
PNP complement: BF872.
1
PINNING
123
PIN
DESCRIPTION
MBH793
1
emitter
2
collector, connected to mounting base
Fig.1 Simplified outline (TO-202) and symbol.
3
base
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BF869
-
250
V
BF871
-
300
V
V CEO
collector-emitter voltage
open base
BF869
-
250
V
BF871
-
300
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
50
mA
I CM
peak collector current
peak value
-
100
mA
I BM
peak base current
-
50
mA
P tot
total power dissipation
T amb £
25
°
C
-
1.6
W
T mb £
25
°
C
-
5
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
° C
T amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 12
2
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Philips Semiconductors
Product specification
NPN high-voltage transistors
BF869; BF871
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
78
K/W
R th j-mb
thermal resistance from junction to mounting base
25
K/W
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I CBO
collector cut-off current
I E = 0; V CB = 200 V
-
10
nA
I E = 0; V CB = 200 V; T j = 150 ° C
10
m A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
50
nA
h FE
DC current gain
I C = 25 mA; V CE =20V
50
-
V CEsat
collector-emitter saturation voltage
I C = 30 mA; I B =5mA
-
600
mV
C re
feedback capacitance
I C =i c = 0; V CE = 30 V; f = 1 MHz
-
2
pF
f T
transition frequency
I C = 10 mA; V CE = 10 V; f = 100 MHz
60
-
MHz
1999 Apr 12
3
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Philips Semiconductors
Product specification
NPN high-voltage transistors
BF869; BF871
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
SOT128B
E 1
c 1
P
P 1
H E
D
L 1
L 2
L
123
c
b p
w M
Q
e 1
A
e
E
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
L 2 (1)
max
UNIT
A
b p
c
c 1
D
E
E 1
e
e 1
H E
L
L 1
P
P 1
Q
w
4.6
4.4
0.8
0.6
0.65
0.5
0.56
0.46
8.6
8.4
10.1
9.9
10.4
10.0
24.2
23.8
13.3
12.2
2.4
2.0
3.8
3.6
3.9
3.7
1.7
1.5
mm
5.08
2.54
0.25
2.5
Note
1. Plastic flash allowed within this zone
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT128B
TO-202
97-02-28
1999 Apr 12
4
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Philips Semiconductors
Product specification
NPN high-voltage transistors
BF869; BF871
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 12
5
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