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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
[
BUH515D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
n
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
n
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
n
APPLICATIONS:
n
3
2
HORIZONTAL DEFLECTION FOR COLOUR
TV
1
DESCRIPTION
The BUH515D is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
R Typ. = 12
W
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
1500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
700
V
V
EBO
Emitter-Base Voltage (I
C
=0)
5
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current (t
p
<5ms)
15
A
I
B
Base Current
5
A
I
BM
Base Peak Current (t
p
<5ms)
8
A
P
tot
Total Dissipation at T
c
=25
o
C
50
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
November 1999
1/7
BUH515D
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
2.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
=25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
=0)
V
CE
= 1300 V
V
CE
= 1500 V
V
CE
= 1500 V T
j
=125
o
C
10
0.2
2
A
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
=0)
V
EB
=5V
200
mA
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
=5A I
B
=1.25A
1.5
V
V
BE(s at)
*
Base-Emitter
Saturation Voltage
I
C
=5A I
B
=1.25A
1.3
V
h
FE
*
DC Current Gain
I
C
=5A V
CE
=5V
I
C
=5A V
CE
=5V T
j
=100
o
C
5
3
10
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
=400V I
C
=5A
I
B1
=1.5A I
B2
=-2.5A
2.4
170
3.6
260
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 5 A f = 15625 Hz
I
B1
=1.25A I
B2
=-2.5A
V
ceflyback
=1050sin
Y
U
3.5
450
s
ns
10
10
6
M
<
tV
V
F
Diode Forward Voltage I
F
=5A
2
V
*
Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
2/7
m
m
m
BUH515D
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 16 KHz
Switching Time Inductive Load at 16KHz
(see figure 2)
3/7
BUH515D
Switching Time Resistive Load
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
o
C (line scan phase). On the other hand,
negative base current I
B2
must be provided to
turn off the power transistor (retrace phase). Most
of the dissipation, especially in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
B2
which
minimizes power losses, fall time t
f
and,
consequently, T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B2
at 16 KHz frequencies for
choosing the optimum negative drive. The test
circuit is illustrated in fig. 1.
Inductance L
1
serves to control the slope of the
negative base current I
B2
to recombine the
excess carrier in the collector when base current
is still present, this avoid any tailing phenomenon
in the collector current.
The values of L and C are calculated from the
following equations:
1
2
(
I
C
2
=
1
2
C
(
V
CEfly
2
L
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
1
````
4/7
L
)
)
w=
2
p
f
=
BUH515D
Figure 1:
Inductive Load Switching Test Circuit
Figure 2:
Switching Waveforms in a Deflection Circuit
5/7
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