IRFP460.pdf

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IRFP460
MegaMOS TM
IRFP 460 V DSS
= 500 V
Power MOSFET
I D(cont)
= 20 A
R DS(on)
= 0.27
N-Channel Enhancement Mode, HDMOS TM Family
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
T J = 25 °
C to 150 °
C
500
V
V DGR
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
500
V
V GS
Continuous
20
V
D (TAB)
V GSM
Transient
30
V
I D25
T C
= 25 ° C
20
A
G = Gate,
D = Drain,
I DM
T C = 25 °
C, pulse width limited by T JM
80
A
S = Source,
TAB = Drain
I AR
20
A
E AR
T C
= 25
C
28
mJ
dv/dt
I S
I DM , di/dt
100 A/
s, V DD
V DSS ,
3.5
V/ns
T J ≤ 150 ° C, R G = 2 Ω
Features
P D
T C = 25 ° C
260
W
l Repetitive avalanche energy rated
l Fast switching times
l Low R DS (on) HDMOS TM process
l Rugged polysilicon gate cell structure
l High Commutating dv/dt Rating
T J
-55 ... +150
C
T JM
150
C
T stg
-55 ... +150
C
M d
Mounting torque
1.15/10 Nm/lb.in.
Weight
6
g
Applications
Maximum lead temperature for soldering
300
C
l Switching Power Supplies
l Motor controls
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T J = 25
C, unless otherwise specified)
min. typ. max.
V DSS
V GS = 0 V, I D = 250 µ
A
500
V
V GS(th)
V DS = V GS , I D = 250 µ
A
2
4 V
I GSS
V GS
=
20 V DC , V DS = 0
100 nA
I DSS
V DS
= 0.8 • V DSS
T J = 25
C
25
A
V GS = 0 V
T J = 125 °
C
250
µ A
R DS(on)
V GS = 10 V, I D = 12 A
0.25 0.27
Pulse test, t ≤
300 µ
s, duty cycle d
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
92825D (5/98)
© 2000 IXYS All rights reserved
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IRFP 460
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(T J = 25
C, unless otherwise specified)
min. typ. max.
g fs
V DS = 10 V; I D = 12 A, pulse test
13
21
S
C iss
4200
pF
1 2 3
C oss
V GS
= 0 V, V DS = 25 V, f = 1 MHz
450
pF
C rss
135
pF
t d(on)
23
35 ns
t r
V GS = 10 V, V DS = 250 V, I D = 20 A
81 120 ns
t d(off)
R G = 4.3
(External)
85 130 ns
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
t f
65
98 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A 1 2.2 2.54 .087 .102
A 2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b 1 1.65 2.13 .065 .084
b 2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1
Q g(on)
135 210 nC
Q gs
V GS
= 10 V, V DS = 200 V, I D = 20 A
28
40 nC
Q gd
62 110 nC
R thJC
0.45 K/W
R thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
4.50
.177
P 3.55 3.65 .140 .144
(T J = 25 °
C, unless otherwise specified)
Q
5.89 6.40 0.232 0.252
Symbol
Test Conditions
min. typ. max.
R
4.32 5.49 .170 .216
S
6.15 BSC
242 BSC
I S
V GS = 0 V
20 A
I SM
Repetitive; pulse width limited by T JM
80 A
V SD
I F = 20 A, V GS = 0 V,
1.8 V
Pulse test, t
300
s, duty cycle d
2 %
t rr
I F = 20 A, -di/dt = 100 A/ µ
s, V R = 100 V
570
860 ns
Q rr
5.7
µC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IRFP 460
50
V GS =10V
9V
8V
7V
T J = 25 O C
T J = 125 O C
V GS =10V
9V
8V
7V
30
40
6V
6V
30
20
20
5V
5V
10
10
0
0
0
4
8
12
16
20
0
4
8
12
16
20
V DS - Volts
V DS - Volts
Figure 1. Output Characteristics at 25 O C
Figure 2. Output Characteristics at 125 O C
2.8
6
V GS = 10V
V GS = 10V
2.4
Tj=125 0 C
5
2.0
4
I D = 24A
1.6
Tj=25 0 C
3
I D = 12A
1.2
2
0.8
0
10
20
30
40
50
1
25
50
75
100
125
150
I D - Amperes
T J - Degrees C
Figure 3. R DS(on) normalized to value at I D = 12A
Figure 4. R DS(on) normalized to value at I D = 12A
25
24
20
20
15
16
12
10
T J = 125 o C
8
5
T J = 25 o C
4
0
0
-0-5 0 505050
0
2
4
6
8
T C - Degrees C
V GS - Volts
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
© 2000 IXYS All rights reserved
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IRFP 460
12
5000
Ciss
V DS = 400V
I D = 15A
10
2500
f = 1MHz
8
Coss
1000
6
500
4
Crss
2
250
0
0
50
100
150
200
100
0
5
10
15
20
25
Gate Charge - nC
V DS - Volts
Figure 7. Gate Charge
Figure 8. Capacitance Curves
50
100
40
10
0.1ms
30
1ms
T J = 125 O C
20
10ms
T J = 25 O C
1
T C = 25 O C
100ms
DC
10
0
0. 1
0.2
0.4
0.6
0.8
1.0
1.2
10
100
500
V SD - Volts
V DS - Volts
Figure 9. Source Current vs. Source to Drain Voltage
Figure10. Forward Bias Safe Operating Area
1
0.1
Single pulse
0.01
10 -4
10 -3
10 -2
10 -1
10 0
10 1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
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