BAT43.PDF

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SMALL SIGNAL SCHOTTKY DIODES
BAT 42
BAT 43
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessive voltage such as electrostaticdischarges.
DO 35
(Glass)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
V RRM
Repetitive Peak Reverse Voltage
30
V
I F
Forward Continuous Current
T a =25
°
200
mA
I FRM
Repetitive Peak Fordware Current
t p
3
1s
500
mA
d 3
0.5
I FSM
Surge non Repetitive Forward Current*
t p = 10ms
4
A
P tot
Power Dissipation*
T l =65
°
C
200
mW
T stg
T j
Storage and Junction Temperature Range
- 65 to +150
- 65 to +125
°
C
°
C
T L
Maximum Temperature for Soldering during 10s at 4mm from Case
230
°
C
THERMAL RESISTANCE
Symbol
Test Conditions
Value
Unit
R th (j-a)
Junction-ambient*
300
°
C/W
* On infinite heatsink with 4mm lead length
November 1994
1/4
C
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BAT 42/BAT 43
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Condition s
Min.
Typ.
Max.
Unit
V BR
Tj = 25
°
C
I R = 100
m
A
30
V
V F *
T j =25
°
C
I F = 200mA
All Types
1
V
T j =25
°
C
I F = 10mA
BAT 42
0.4
T j =25
°
C
I F = 50mA
0.65
T j =25
°
C
I F = 2mA
BAT 43
0.26
0.33
T j =25
°
C
I F = 15mA
0.45
I R *
T j =25
°
C
V R = 25V
0.5
m
A
T j = 100
°
C
100
DYNAMIC CHARACTERISTICS
Symbol
Test Condition s
Min.
Typ.
Max.
Unit
C
T j =25
°
CV R = 1V
f = 1MHz
7
pF
trr
Tj = 25
°
C F = 10mA I R = 10mA i rr = 1mA R L = 100
W
5
ns
h
T j =25
°
CR L = 15K
W
C L = 300pF f = 45MHz V i =2V
80
%
* Pulse test: t p 3
300
m
s
d<
2% .
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
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BAT 42/BAT 43
Figure 3. Reverse current versus junction
temperature (typical values).
Figure 4. Reverse current versus continuous
reverse voltage.
Figure 5. Capacitance C versus reverse
applied voltage V R (typical values).
3/4
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BAT 42/BAT 43
PACKAGE MECHANICAL DATA
DO 35 Glass
B
A
B
/
C
not e 1
E
E
note 1
/
D
/
D
not e 2
DIMENSIONS
REF.
Millimeters
Inches
NOTES
Min.
Max.
Min.
Max.
A
3.050 4.500 0.120 0.117
B
12.7
0.500
1 - The lead diameter
j
D is not controlled over zone E
j
C
1.530 2.000 0.060 0.079
2 - The minimum axial lengh within which the device may be placed
with its leads bent at right angles is 0.59”(15 mm)
j
D
0.458 0.558 0.018 0.022
E
1.27
0.050
Cooling method: by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
- Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A.
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