2SC4814.pdf
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DATA SHEET
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4814 is a power transistor featuring low-saturation voltage and high h
FE
. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low V
CE(sat)
: V
CE(sat)
≤
0.3 V @I
C
= 1.5 A, I
B
= 10 mA
• High h
FE
: h
FE
= 300 to 1,200 @V
CE
= 2.0 V, I
C
= 1.0 A
• On-chip dumper-diode
• Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
±
2.5
A
Collector current (pulse)
I
C(pulse)
PW
≤
300
µ
s, duty cycle
≤
10%
±
5.0
A
Base current (DC)
I
B(DC)
1.0
A
Total power dissipation
P
T
Ta = 25
°
C
1.8
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to +150
°
C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4814
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 120 V, I
E
= 0
50
µ
A
Emitter cutoff current
I
EBO
V
EB
= 5 V, I
C
= 0
50
µ
A
DC current gain
h
FE1
*
CE
= 2 V, I
C
= 1.0 A
300
700
1,200
−
DC current gain
h
FE2
*
CE
= 2 V, I
C
= 1.5 A
250
600
−
Collector saturation voltage
V
CE(sat)
*
I
C
= 1.5 A, I
B
= 10 mA
0.3
V
Base saturation voltage
V
BE(sat)
*
I
C
= 1.5 A, I
B
= 10 mA
1.3
V
Gain bandwidth product
f
T
V
CE
= 10 V, I
C
= 1.0 A
60
MHz
Collector capacitance
C
ob
V
CE
= 10 V, I
E
= 0 , f = 1 MHz
40
pF
Turn-on time
t
on
I
C
= 1.5 A, I
B1
=
−
I
B2
= 10 mA
0.5
µ
s
Storage time
t
stg
, V
CC
= 12 V
Refer to the test circuit.
Ω
2.0
µ
s
Fall time
t
f
0.5
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
0.7 MAX.
EQUIVALENT CIRCUIT
2
Data Sheet D15604EJ2V0DS
R
L
= 8.0
2SC4814
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
Ambient Temperature Ta (
°
C)
Ambient Temperature Ta (
°
C)
Single pulse
Single pulse
Collector to Emitter Voltage V
CE
(V)
Pulse Width PW (s)
Pulse test
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Data Sheet D15604EJ2V0DS
3
Turn-On Time t
on
(
µ
s)
StorageTime t
stg
(
µ
s)
Fall Time t
f
(
s)
Gain Bandwidth Product f
T
(MHz)
Collector Saturation Voltage V
CE(sat)
(V)
Collector Capacitance C
ob
(pF)
Base Saturation Voltage V
BE(sat)
(V)
µ
2SC4814
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D15604EJ2V0DS
5
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