SI4830.pdf

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Si4830DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V DS (V)
r DS(on) (
)
I D (A)
30
0.022 @ V GS = 10 V
7.5
0.030 @ V GS = 4.5 V
6.5
SCHOTTKY PRODUCT SUMMARY
V DS (V)
V SD (V)
Diode Forward Voltage
I F (A)
30
0.50 V @ 1.0 A
2.0
D 1 D 1
D 2 D 2
SO-8
S 1
1
8
D 1
G 1
2
3
4
7
D 1
Schottky Diode
G 1
G 2
S 2
6
D 2
G 2
5
D 2
Top View
Ordering Information: Si4830DY
Si4830DY-T1 (with Tape and Reel)
S 1
S 2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V DS
30
V
Gate-Source Voltage
V GS
20
T A = 25
C
7.5
5.7
Continuous Drain Current (T J = 150
C) a
I D
T A = 70
C
6.0
4.6
A
Pulsed Drain Current
I DM
30
Continuous Source Current (Diode Conduction) a
I S
1.7
0.9
T A = 25
C
2.0
1.1
Maximum Power Dissipation a
P D
W
T A = 70
C
1.3
0.7
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
t
10 sec
52
62.5
53
62.5
Maximum Junction-to-Ambient a
J i tAbi a
R thJA
Steady-State
93
110
93
110
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R thJC
35
40
35
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
www.vishay.com
1
30
V
C) a
Continuous Drain Current (T J = 150
I D
A
Maximum Power Dissipation a
P D
W
Mi
R
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Si4830DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T J = 25 C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ a Max Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250
A
0.8
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS =
20 V
100
nA
V DS = 30 V, V GS = 0 V
Ch 1
Ch-2
1
100
Zero Gate Voltage Drain Current
I DSS
A
Ch-1
15
V DS = 30 V, V GS = 0 V, T J = 85
C
Ch 1
Ch-2
2000
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
20
A
Drain-Source On-State Resistance b
r DS(on)
V GS = 10 V, I D = 7.5 A
0.018
0.022
V GS = 4.5 V, I D = 6.5 A
0.024
0.030
Forward Transconductance b
g fs
V DS = 15 V, I D = 7.5 A
22
S
Ch-1
0.8
1.2
Diode Forward Voltage b
V SD
I S = 1 A, V GS = 0 V
Ch 1
Ch-2
V
0.47
0.5
Dynamic a
Total Gate Charge
Q g
13
20
Gate-Source Charge
Q gs
V DS = 15 V, V GS = 10 V, I D = 7.5 A
2
nC
DS
, GS
, D
Gate-Drain Charge
Q gd
2.7
Gate Resistance
R g
0.5
3.2
Turn-On Delay Time
t d(on)
8
16
Rise Time
t r
V DD = 15 V, R L = 15
10
20
Turn-Off Delay Time
t d(off)
I D
1 A, V GEN = 10 V, R G = 6
21
40
ns
Fall Time
t f
10
20
Source-Drain Reverse Recovery Time
t rr
I F = 1.7 A, di/dt = 100 A/
s
Ch 1
Ch-2
40
80
32
70
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300
s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T J = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V F
I F = 1.0 A
0.47
0.50
V
I F = 1.0 A, T J = 125
C
0.36
0.42
V r = 30 V
0.004
0.100
Maximum Reverse Leakage Current
I rm
V r = 30 V, T J = 100
C
0.7
10
mA
g
rm
V r = - 30 V, T J = 125
C
3.0
20
Junction Capacitance
C T
V r = 10 V
50
pF
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2
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
V DS = 30 V V GS = 0 V
Ch-1
Zero Gate Voltage Drain Current
I DSS
A
V DS = 30 V V GS = 0 V T J = 85
C
Drain Source On State Resistance b
r DS( )
Diode Forward Voltage b
V SD
I S = 1 A V GS = 0 V
V
V DD = 15 V, R L = 15
ns
Source Drain Reverse Recovery Time
t
I F = 1 7 A di/dt = 100 A/
s
Ch-1
Forward Voltage Drop
V F
V
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Si4830DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
20
20
V GS = 10 thru 4 V
3 V
16
16
12
12
8
8
T C = 125
C
4
2 V
4
25
C
-55
C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.040
1000
0.032
800
C iss
0.024
V GS = 4.5 V
600
V GS = 10 V
0.016
400
C oss
0.008
200
C rss
0.000
0
0
4
8
12
16
20
0
6
12
18
24
30
I D - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
V DS = 15 V
I D = 7.5 A
V GS = 10 V
I D = 7.5 A
8
1.4
6
1.2
4
1.0
2
0.8
0
0.6
0
3
6
9
12
15
- 50 - 25
0
25
50
75
100 125 150
Q g - Total Gate Charge (nC)
T J - Junction Temperature (
C)
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
www.vishay.com
3
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Si4830DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.04
T J = 150
C
I D = 7.5 A
10
0.03
0.02
T J = 25
C
0.01
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
50
0.2
40
I D = 250
A
- 0.0
30
- 0.2
20
- 0.4
- 0.6
10
- 0.8
0
- 50 - 25
0
25
50
75
100 125 150
10 -3
10 -2
10 -1
1
10
100
600
T J - Temperature (
C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P DM
0.05
t 1
t 2
t 1
t 2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 93
C/W
3. T JM - T A = P DM Z thJA (t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 71161
S-31989—Rev. C, 13-Oct-03
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Si4830DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
MOSFET
2
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
10
T J = 150
C
1
0.1
30 V
T J = 25
C
24 V
0.01
0.001
0.0001
1
0
25
50
75
100
125
150
0.0
0.3
0.6
0.9
1.2
1.5
T J - Temperature (
C)
V F - Forward Voltage Drop (V)
Capacitance
200
160
120
80
C oss
40
0
0
6
12
18
24
30
V DS - Drain-to-Source Voltage (V)
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
www.vishay.com
5
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