TPC8202.pdf

TPC8202

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

TPC8202

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Unit: mm

Small footprint due to small and thin package

Low drain−source ON resistance : R DS (ON) = 41 mΩ (typ.)

High forward transfer admittance : |Y fs | = 9 S (typ.)

Low leakage current : I DSS = 10 µA (max) (V DS = 20 V)

Enhancement−mode : V th = 0.5~1.1 V (V DS = 10 V, I D = 200 µA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

V DSS

Drain-gate voltage (R GS = 20k Ω )

V DGR

JEDEC ―

Gate-source voltage

V GSS

±12

D C

(Note 1)

I D

JEITA

―

Drain curren

Pulse

(Note 1)

I DP

TOSHIBA

2-6J1E

Drain power

dissipation

(t = 10s)

Single-device

operation

P D (1)

1.5

Weight: 0.080 g (typ.)

(Note 3a)

Single-device value

at dual operation

(Note 2a)

P D(2)

1.1

Circuit Configuration

(Note 3b)

Drain power

dissipation

(t = 10s)

Single-device

operation

P D (1)

0.75

(Note 3a)

Single-device value

at dual operation

(Note 2b)

P D (2)

0.45

(Note 3b)

Single pulse avalanche energy

E AS

32.5

(Note 4)

Avalanche current

(Note 1)

I AR

Repetitive avalanche energy

Single-device value at operation

E AR

0.1

(Note 2a, Note 3b, Note 5)

Channel temperature

T ch

150

°C

Storage temperature range

T stg −55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

2003-02-20

2.5-V Gate drive

TPC8202

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Single-device operation

(Note 3a)

R th (ch-a) (1)

83.3

Thermal resistance, channel to ambient

(t = 10s)

(Note 2a) Single-device value at

dual operation

R th (ch-a) (2)

114

(Note 3b)

°C/W

Single-device operation

(Note 3a)

R th (ch-a) (1)

167

Thermal resistance, channel to ambient

(t = 10s)

(Note 2b) Single-device value at

dual operation

R th (ch-a) (2)

278

(Note 3b)

Marking (Note 6)

TPC8202

Type

※

Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a)

b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

(b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.).

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.).

Note 4: V DD = 16 V, T ch = 25°C (initial), L = 1.0 mH, R G = 25 Ω, I AR = 5 A

Note 5: Repetitive rating; pulse width limited by maximum channel temperature.

Note 6: ● on lower right of the marking indicates Pin 1.

※ Weekly code:(Three digits)

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

2003-02-20

TPC8202

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

I GSS

V GS = ±10 V, V DS = 0 V

—

±10

µA

Drain cut−off current

I DSS

V DS = 20 V, V GS = 0 V

—

µA

Drain−source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V

—

Gate threshold voltage

V th

V DS = 10 V, I D = 200 µA

0.5

—

2.0

R DS (ON) V GS = 2.5 V, I D = 2.5 A

—

mΩ

Drain−source ON resistance

R DS (ON) V GS = 4 V, I D = 2.5 A

—

mΩ

Forward transfer admittance

|Y fs |

V DS = 10 V, I D = 2.5 A

—

Input capacitance

C iss

—

570

—

Reverse transfer capacitance

C rss

V DS = 10 V, V GS = 0 V, f = 1 MHz

—

Output capacitan ce

C oss

—

285

—

Rise time

t r

—

Turn−on time

t on

—

Switching time

Fall time

t f

—

Turn−off time

t off

—

110

—

Total gate charge (Gate−source

plus gate−drain)

Q g

—

Gate−source charge

Q gs

V DD ≈ 16 V, V GS = 5 V, I D = 5 A

—

Gate−drain (“miller”) charge

Q gd

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

I DRP

—

Forward voltage (diode)

V DSF

I DR = 5 A, V GS = 0 V

—

— −1.2

2003-02-20

TPC8202

2003-02-20

TPC8202

2003-02-20

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