IRF2907.pdf

(373 KB) Pobierz
DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
PD - 95872
AUTOMOTIVE MOSFET
IRF2907Z
IRF2907ZS
IRF2907ZL
HEXFET ® Power MOSFET
Features
Advanced Process Technology
D
V DSS = 75V
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
R DS(on) = 4.5m Ω
Repetitive Avalanche Allowed up to Tjmax
G
Description
Specifically designed for Automotive applications,
this HEXFET ® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S
I D = 75A
TO-220AB
IRF2907Z
D 2 Pak
IRF2907ZS
TO-262
IRF2907ZL
Absolute Maximum Ratings
Parameter
Max.
170
120
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V (Silicon Limited)
A
I D @ T C = 100°C Continuous Drain Current, V GS @ 10V (See Fig. 9)
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited)
I DM Pulsed Drain Current
P D @T C = 25°C Maximum Power Dissipation
75
680
330
2.2
± 20
300
690
See Fig.12a,12b,15,16
W
Linear Derating Factor
W/°C
V GS
Gate-to-Source Voltage
V
E AS
Single Pulse Avalanche Energy (Thermally Limited)
mJ
E AS (tested)
Single Pulse Avalanche Energy Tested Value
I AR
Avalanche Current
A
E AR
Repetitive Avalanche Energy
mJ
T J
Operating Junction and
-55 to + 175
°C
T STG Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
0.45
°C/W
R θ CS
Case-to-Sink, Flat, Greased Surface
0.50
–––
R θ JA
Junction-to-Ambient
–––
62
R θ JA
Junction-to-Ambient (PCB Mount, steady state)
–––
40
HEXFET ® is a registered trademark of International Rectifier.
www.irf.com
1
519853005.040.png 519853005.041.png 519853005.042.png 519853005.043.png 519853005.001.png 519853005.002.png
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V (BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V
∆Β V DSS / ∆ T J Breakdown Voltage Temp. Coefficient ––– 0.069 ––– V/°C
R DS(on)
Static Drain-to-Source On-Resistance –––
3.5
4.5
m Ω
Conditions
V GS = 0V, I D = 250µA
Reference to 25°C, I D = 1mA
V GS = 10V, I D = 75A
V GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
V DS = V GS , I D = 250µA
gfs
Forward Transconductance
180
–––
–––
S
V DS = 25V, I D = 75A
I DSS
Drain-to-Source Leakage Current
–––
–––
20
µA
V DS = 75V, V GS = 0V
V DS = 75V, V GS = 0V, T J = 125°C
––– ––– 250
I GSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
V GS = 20V
V GS = -20V
Gate-to-Source Reverse Leakage
–––
––– -200
Q g
Total Gate Charge
––– 180 270
I D = 75A
Q gs
Gate-to-Source Charge
–––
46
–––
nC
V DS = 60V
V GS = 10V
Q gd
Gate-to-Drain ("Miller") Charge
–––
65
–––
t d(on)
Turn-On Delay Time
–––
19
–––
ns
V DD = 38V
I D = 75A
t r
Rise Time
––– 140 –––
t d(off)
Turn-Off Delay Time
–––
97
–––
R G = 2.5 Ω
t f
Fall Time
––– 100 –––
V GS = 10V
L D
Internal Drain Inductance
–––
5.0
–––
nH Between lead,
6mm (0.25in.)
D
L S
Internal Source Inductance
–––
13
–––
from package
and center of die contact
G
S
C iss
Input Capacitance
––– 7500 –––
pF
V GS = 0V
V DS = 25V
C oss
Output Capacitance
––– 970 –––
C rss
Reverse Transfer Capacitance
–––
510
–––
ƒ = 1.0MHz, See Fig. 5
C oss
Output Capacitance
––– 3640 –––
V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz
C oss
Output Capacitance
––– 650 –––
V GS = 0V, V DS = 60V, ƒ = 1.0MHz
C oss eff.
Effective Output Capacitance
––– 1020 –––
V GS = 0V, V DS = 0V to 60V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
––– –––
75
MOSFET symbol
D
(Body Diode)
A
showing the
integral reverse
p-n junction diode.
I SM
Pulsed Source Current
––– ––– 680
G
(Body Diode)
S
V SD
Diode Forward Voltage
–––
–––
1.3
V
T J = 25°C, I S = 75A, V GS = 0V
t rr
Reverse Recovery Time
– 1 1 s
T J = 25°C, I F = 75A, V DD = 38V
di/dt = 100A/µs
Q rr
Reverse Recovery Charge
–––
59
89
nC
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
C oss eff. is a fixed capacitance that gives the same
charging time as C oss while V DS is rising from 0 to 80% V DSS .
Limited by T Jmax , starting T J = 25°C,
L=0.11mH, R G = 25 Ω , I AS = 75A, V GS =10V.
Part not recommended for use above this value.
Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
I SD ≤ 75A, di/dt ≤ 340A/µs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
This is applied to D 2 Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R θ is measured at
2
www.irf.com
519853005.003.png 519853005.004.png 519853005.005.png 519853005.006.png 519853005.007.png
10000
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
BOTTOM
4.5V
100
100
4.5V
10
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
1
10
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T J = 25°C
100
T J = 175°C
150
T J = 175°C
10
T J = 25°C
100
1
50
V DS = 25V
≤ 60µs PULSE WIDTH
V DS = 10V
380µs PULSE WIDTH
0.1
0
2
4
6
8
10
0
25
50
75
100
125
150
V GS , Gate-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.irf.com
3
519853005.008.png 519853005.009.png 519853005.010.png 519853005.011.png 519853005.012.png 519853005.013.png 519853005.014.png 519853005.015.png 519853005.016.png 519853005.017.png 519853005.018.png 519853005.019.png 519853005.020.png 519853005.021.png 519853005.022.png
100000
V GS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
I D = 90A
10.0
V DS = 60V
V DS = 38V
V DS = 15V
10000
C iss
8.0
C oss
6.0
1000
C rss
4.0
2.0
100
0.0
1
10
100
0
50
100
150
200
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J = 175°C
1000
100
100
100µsec
T J = 25°C
10
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V GS = 0V
1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
100
1000
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
519853005.023.png 519853005.024.png 519853005.025.png 519853005.026.png 519853005.027.png 519853005.028.png 519853005.029.png 519853005.030.png 519853005.031.png 519853005.032.png
180
2.5
160
Limited By Package
I D = 90A
V GS = 10V
140
2.0
120
100
1.5
80
60
40
1.0
20
0
0.5
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
R 1
R 1
R 2
R 2
Ri (°C/W) τ i (sec)
0.251 0.000457
0.199 0.003019
0.01
τ J
τ C
τ J
τ
τ 1
τ 2
τ 1
τ 2
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τ i / Ri
Ci i / Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
519853005.033.png 519853005.034.png 519853005.035.png 519853005.036.png 519853005.037.png 519853005.038.png 519853005.039.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin